Abstract:In this work, we studied the mechanisms and switching properties of AlGaN/GaN high-electron-mobility-transistors (HEMTs) passivated by amorphous-SiNx and monocrystal-like AlN. The effects of interface traps and polarization charges on current collapse are investigated by TCAD simulations and experimental characterizations. Surface/interface deep levels can be compensated by both shallow donor-like traps (SiNx passivation) and polarization charges (AlN passivation) at passivation/heterostructure interface, but with different levels of effectiveness under fast switching conditions. SiNx-passivation introduces shallow donor-like trap states with short time constant that favors a fast emission of trapped electrons in the access region and suppressed current collapse, but nevertheless exhibits more severe time-dependent recovery of dynamic on-resistance. For AlN passivation, interface traps are compensated by the fixed positive polarization charges and the off-state depletion region (in the 2DEG channel) is formed predominantly by electric-field effect, leading to an immediate accumulation of high channel electron concentration after switching the HEMT devices back to on-state and instant response of drain current to gate and drain bias. The field plate structure is necessary in SiNx-passivated devices for both current collapse suppression and electric field alleviation. With AlN passivation, the field plate can be solely designed for achieving more uniform electric field distribution for gate reliability concern without the concern of current collapse.

Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs

Study on transconductance non-linearity of AlGaN/GaN HEMTs considering acceptor-like traps in barrier layer under the gate

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage

Study on the Charging Current of Surface Traps in AlGaN/GaN High Electron Mobility Transistors with a Slot Gate Structure

Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized P‐gan Gate AlGaN/GaN HEMTs

Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

Negative Transconductance Effect in P-Gan Gate AlGaN/GaN HEMTs by Traps in Unintentionally Doped GaN Buffer Layer*

Investigation of SiN<i><sub>x</sub></i> and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

Charge Trapping Related Channel Modulation Instability in P-GaN Gate HEMTs.

High-field-induced Electron Detrapping in an AlGaN/GaN High Electron Mobility Transistor

Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress

Spatially-resolved Spectroscopic Measurements of Ec − 0.57 Ev Traps in AlGaN/GaN High Electron Mobility Transistors

PEALDInvestigation of SiNx and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

Trap-Related Current Collapse Effects in GaN HEMTs

A Study of the Gate-Stack Small-Signal Model and Determination of Interface Traps in GaN-Based MIS-HEMTs

Theoretical Analysis of Buffer Trapping Effects on Off-State Breakdown Between Gate and Drain in AlGaN/GaN HEMTs

Study of Current Collapse Behaviors of Dual-Gate AlGaN/GaN HEMTs on Si

Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Surface Acceptor-Like Trap Model for Gate Leakage Current Degradation in Lattice-Matched Inaln/Gan Hemts