Abstract:In this paper, we present a systematic investigation of metal–organic chemical vapor deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN metal insulator semiconductor high electron mobility transistors (MISHEMTs). The dielectric constant and breakdown field of the in situ SiN were extracted from devices with varied gate dielectric thicknesses. Using frequency-dependent capacitance–voltage and parallel conductance methods, we obtained a low trap density of $\sim 3\times 10^{12}$ cm $^{-2}$ eV $^{-1}$ at the SiN/AlGaN interface. The MISHEMTs with a source–drain distance of $3~\mu \text{m}$ show a maximum drain current of 1560 mA/mm and a high on/off current ratio of $10^{9}$ . The device threshold voltage ( ${V}_\textsf {th}$ ) stability was assessed by means of both negative and positive gate stress measurements, as well as temperature-dependent $ {I}_\textsf {D}$ – ${V}_\textsf{G}$ measurements. We observed a minimal $ {V}_\textsf{th}$ shift of ~0.4 V under both 3000 s gate stress of ${V}_\textsf {GS}= 4$ V and up to 200 °C thermal stimulation. Furthermore, combining the in situ SiN with plasma-enhanced chemical vapor deposition SiN, we developed a bilayer passivation scheme for effective suppression of current collapse. Employing the high-quality in situ SiN, we have demonstrated large-area GaN MISHEMTs on Si with a gate width of 20 mm, showing a low off-state leakage of $2~\mu \text{A}$ /mm at 600 V and a low dynamic/static ON-resistance ratio. The device results show great advantages of employing in situ SiN in D-mode GaN MISHEMTs for high-efficiency power switching applications.

PEALDInvestigation of SiNx and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

Investigation of SiN<i><sub>x</sub></i> and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

Robust SiNx/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiNx Layer

Various Recipes of SiNx Passivated AlGaN/GaN High Electron Mobility Transistors in Correlation with Current Slump

Investigation of Surface Traps-Induced Current Collapse Phenomenon in AlGaN/GaN High Electron Mobility Transistors with Schottky Gate Structures

Study of Surface Passivation with Different a-SiNBxB:H Films Effect on AlGaN/GaN HEMTs

Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx As Gate Dielectric

Mechanism study of the surface passivation effect on current collapse characteristics of AlGaN/GaN HEMTs

Surface Leakage Currents in Sin and Al2o3 Passivated Algan/Gan High Electron Mobility Transistors

Effects of Polycrystalline AlN Film on the Dynamic Performance of AlGaN/GaN High Electron Mobility Transistors

TCAD-Based Investigation of the Electrical Characteristics of Normally off P-Gan Passivated GaN HEMTs

Comparative Study of Si3N4-PECVD and Al2O3-ALD Surface Passivation in T-Shaped Gate InAlAs/InGaAs InP Based HEMTs

Investigation of Trap States in Al 2 O 3 InAlN/GaN Metal–oxide–semiconductor High-Electron-mobility Transistors

Effects of SiNxon Two-Dimensional Electron Gas and Current Collapse of AlGaN/GaN High Electron Mobility Transistors

Investigation of the Interface Between LPCVD-SiNx Gate Dielectric and III-nitride for AlGaN/GaN MIS-HEMTs

Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs

Improving Electrical Transport Properties of AlGaN/GaN Heterostructure Using AlSiN Passivation

AlGaN/GaN MISHEMTs with AlN Gate Dielectric Grown by Thermal ALD Technique

The Influence of the PCF Scattering on the Electrical Properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 Surface Passivation

Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si 3 N 4 Bilayer Passivation