Abstract:In this work, we studied the mechanisms and switching properties of AlGaN/GaN high-electron-mobility-transistors (HEMTs) passivated by amorphous-SiNx and monocrystal-like AlN. The effects of interface traps and polarization charges on current collapse are investigated by TCAD simulations and experimental characterizations. Surface/interface deep levels can be compensated by both shallow donor-like traps (SiNx passivation) and polarization charges (AlN passivation) at passivation/heterostructure interface, but with different levels of effectiveness under fast switching conditions. SiNx-passivation introduces shallow donor-like trap states with short time constant that favors a fast emission of trapped electrons in the access region and suppressed current collapse, but nevertheless exhibits more severe time-dependent recovery of dynamic on-resistance. For AlN passivation, interface traps are compensated by the fixed positive polarization charges and the off-state depletion region (in the 2DEG channel) is formed predominantly by electric-field effect, leading to an immediate accumulation of high channel electron concentration after switching the HEMT devices back to on-state and instant response of drain current to gate and drain bias. The field plate structure is necessary in SiNx-passivated devices for both current collapse suppression and electric field alleviation. With AlN passivation, the field plate can be solely designed for achieving more uniform electric field distribution for gate reliability concern without the concern of current collapse.

Surface Acceptor-Like Trap Model for Gate Leakage Current Degradation in Lattice-Matched Inaln/Gan Hemts

Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation

Vertical Leakage Induced Current Degradation And Relevant Traps With Large Lattice Relaxation In Algan/Gan Heterostructures On Si

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Gate Reliability and its Degradation Mechanism in the Normally OFF High-Electron-Mobility Transistors With Regrown p-GaN Gate

Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs

Electric Field Distribution Around Drain-Side Gate Edge in AlGaN/GaN HEMTs: Analytical Approach

Study on the Charging Current of Surface Traps in AlGaN/GaN High Electron Mobility Transistors with a Slot Gate Structure

Gate Current Transport in Enhancement-Mode P-N Junction/AlGaN/GaN (PNJ) HEMT

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices

High-field-induced Electron Detrapping in an AlGaN/GaN High Electron Mobility Transistor

Study on transconductance non-linearity of AlGaN/GaN HEMTs considering acceptor-like traps in barrier layer under the gate

Study of Current Collapse Behaviors of Dual-Gate AlGaN/GaN HEMTs on Si

Investigation of SiN<i><sub>x</sub></i> and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

Investigation of Bending-Induced Degradation of Flexible AlGaN/GaN HEMTs

Roles of Hole Trap on Gate Leakage of p -GaN HEMTs at Cryogenic Temperatures

Buffer leakage induced pre-breakdown mechanism for AlGaN/GaN HEMTs on Si

Hole Virtual Gate Model Explaining Surface-Related Dynamic R ON in p-GaN Power HEMTs

Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs

Buffer-Induced Time-Dependent OFF-State Leakage in AlGaN/GaN High Electron Mobility Transistors on Silicon