Abstract:Gallium nitride (GaN) power devices enable power electronic systems with enhanced power density and efficiency. Dynamic on-resistance ( $R_{mathrm{scriptscriptstyle ON}}$ ) degradation (or current collapse), originating from buffer trapping, surface trapping and gate instability, has been regarded as a primary challenge for the lateral GaN-on-Si power devices. In this paper, we present an overview and discussion of the mechanisms, characterizations, modeling, and solutions for the degradation of dynamic $R_{mathrm{scriptscriptstyle ON}}$ in GaN power devices. The complex dynamics of acceptor/donor buffer traps and their impacts on dynamic $R_{mathrm{scriptscriptstyle ON}}$ have been analyzed and revealed by TCAD simulations and high-voltage back-gating measurements. The gate instability-induced dynamic $R_{mathrm{scriptscriptstyle ON}}$ increase in different GaN device technologies and the role of gate overdrive are also discussed. Wafer-level and board-level characterization techniques enabling accurate dynamic $R_{mathrm{scriptscriptstyle ON}}$ evaluation are reviewed. The dynamic $R_{mathrm{scriptscriptstyle ON}}$ performance of the state-of-the-art commercial GaN devices is presented, and a behavioral model with the dynamic $R_{mathrm{scriptscriptstyle ON}}$ degradation taken into consideration has been implemented for circuit analysis. The latest progress in GaN device technologies for enhanced dynamic performance is also reviewed and discussed.

Hole Virtual Gate Model Explaining Surface-Related Dynamic R ON in p-GaN Power HEMTs

Analytical Model for AlGaN/GaN High Electron Mobility Transistor

Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling

Physics Based SPICE Modeling of Dynamic On-state Resistance of p-GaN HEMTs

Surface Acceptor-Like Trap Model for Gate Leakage Current Degradation in Lattice-Matched Inaln/Gan Hemts

Virtual-Body P-Gan Gate HEMT with Enhanced Ruggedness Against Hot-Electron-Induced Degradation

Exploitation of Hole Injection and Spreading for Dynamic Enhancement in P-Gan Gate HEMT under Room/High Temperatures

IG- and VGS-Dependent Dynamic RON Characterization of Commercial High-Voltage P-Gan Gate Power HEMTs

Charge Detrapping on Gate Edge of AlGaN/GaN HEMT Under Drain Stress

Charge Trapping Related Channel Modulation Instability in P-GaN Gate HEMTs.

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Improved breakdown voltage and dynamic R on characteristics in normally-off GaN-based HEMTs featuring fully-recessed and bilayer-dielectric gate structure

Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile

Dynamic Interplays of Gate Junctions in Schottky-type P-Gan Gate Power HEMTs During Switching Operation

Incorporating the Dynamic Threshold Voltage into the SPICE Model of Schottky-Type P-Gan Gate Power HEMTs

Study on the Dynamic R<sub>on</sub> Degradation in GaN-based Power HEMT

An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices

Suppression of Hot-Electron-Induced Dynamic RON Degradation in P-Gan Gate HEMT Using Active Passivation and Virtual Body

Characterization of Dynamic $i_{\text{off}}$ in Schottky-Type $P$-Gan Gate HEMTs

Electric Field Distribution Around Drain-Side Gate Edge in AlGaN/GaN HEMTs: Analytical Approach

Reverse Current Stress Induced Dynamic Ron of GaN HEMTs in Soft-Switching Mode