Abstract:GaN power transistors are attracting increasing attention for next-generation power switching applications. However, GaN power transistors should not be regarded as a direct replacement for silicon power metal–oxide–semiconductor field-effect transistors, since the unique properties of GaN power transistors require special treatment. In this work we review a unique and critical property of GaN power transistors, the dynamic threshold voltage (V th). GaN power transistors feature a p-GaN gate structure, while the gate metal contacts the p-GaN layer through a Schottky junction. This unique p-GaN gate structure is distinctively different from the silicon metal–oxide–semiconductor gate structure in that the p-GaN layer is actually a floating region without direct electrical contact to the external electrodes of the device. The floating p-GaN layer enables a charge storage process during the switching operation of a p-GaN gate high-electron-mobility transistor. Through carefully designed experiments, the strong correlation between charge storage and the dynamic V th shift has been revealed; this also serves as an approach to accurately predict the dynamic V th during switching operation. The influence of the dynamic V th on power switching applications is discussed. For example, with a positive dynamic V th shift, the reverse conduction voltage of a GaN power transistor is significantly increased, adding to the power loss. This positive V th shift also demands a sufficiently high gate drive voltage to ensure that the GaN power transistor can be fully turned on, which reduces the safety margin for the gate reliability of the device. To design a GaN based power switching circuit, accurate simulation of the device/circuit characteristics is necessary. Circuit simulations that do not consider the dynamic V th lead to a large deviation from the measurement circuit characteristics. We demonstrate that by incorporating the dynamic V th into the circuit model this deviation can be effectively eliminated.

Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling

Study on the Dynamic R<sub>on</sub> Degradation in GaN-based Power HEMT

Mechanism Analysis of Dynamic On-State Resistance Degradation for a Commercial GaN HEMT Using Double Pulse Test

Dynamic $r_{\mathrm {ON}}$ of GaN-on-Si Lateral Power Devices with a Floating Substrate Termination

Improved breakdown voltage and dynamic R on characteristics in normally-off GaN-based HEMTs featuring fully-recessed and bilayer-dielectric gate structure

Dynamic On-Resistance Characterization of GaN Power HEMTs under Forward/Reverse Conduction Using Multigroup Double Pulse Test

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Reverse Current Stress Induced Dynamic Ron of GaN HEMTs in Soft-Switching Mode

Evaluation and Analysis of Temperature-Dependent Dynamic $r_{{{\mathrm{ds}}},{{\mathrm{on}}}}$ of GaN Power Devices Considering High-Frequency Operation

Quantifying Dynamic On-State Resistance of GaN HEMTs for Power Converter Design via a Survey of Low and High Voltage Devices

Buffer trapping-induced R<inf>ON</inf> degradation in GaN-on-Si power transistors: Role of electron injection from Si substrate

Dynamic On-state Resistance Test and Evaluation of GaN Power Devices under Hard and Soft Switching Conditions by Double and Multiple Pulses

Temperature-Dependent Dynamic Ron of GaN E-HEMTs: the Impact of P-Gan Drain

Investigation of Temperature-Dependent Dynamic <i>R</i><sub>ON</sub> of GaN HEMT with Hybrid-Drain under Hard and Soft Switching

Third-Quadrant Conduction Induced Dynamic $\textit{r}_{\text{on}}$ Effect in GaN Gate-Injection-Transistor

Temperature‐dependent Dynamic R DS,ON under Different Operating Conditions in Enhancement‐mode GaN HEMTs

Principles and Impacts of Dynamic Threshold Voltage in a P-Gan Gate High-Electron-mobility Transistor

IG- and VGS-Dependent Dynamic RON Characterization of Commercial High-Voltage P-Gan Gate Power HEMTs

Maximizing the Performance of 650-V P-Gan Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

A Normalized Quantitative Method for GaN HEMT Turn-ON Overvoltage Modeling and Suppressing

Hole Virtual Gate Model Explaining Surface-Related Dynamic R ON in p-GaN Power HEMTs