Abstract:Designing and optimizing high switching frequency, ultra-efficient converters requires detailed knowledge of the behavior and parasitic parameters for both active and passive components. Recently, wide bandgap transistors have enabled simultaneous increases in both switching frequency and efficiency due to higher maximum operating junction temperature limits, lower dc on-state resistances, and reduced parasitic inductances and capacitances. Yet, the early acceptance of gallium-nitride (GaN) switches was plagued by detrimental dynamic on-state resistance effects. This complex phenomenon for GaN devices is characterized by deviations in on-state resistance from dc operating characteristics based on design choices such as the magnitude and duration of both voltage and current stress, switching mode, and junction temperature. While device manufacturers have made improvements compared to early generation devices, experimental evidence from a survey of commercial GaN transistors highlight measurable change in on-state resistance still exists due to variations in voltage stress during hard-switching operation. After sharing insights for obtaining low noise measurements, an analysis method along with two metrics are proposed to characterize dynamic on-state resistance measurements for power electronics designers. Quantifying the performance of GaN devices with standardized metrics facilitates a fair comparison between different GaN device technologies during converter development, enables manufacturing qualification for GaN switches, and provides a benchmark to catalyze improvement for the next generation of GaN device development.

Dynamic Ron Effect in GaN HEMT in a Zero-Voltage-Switching Circuit Due to Off-Resonance Operation

Reverse Conduction Induced Dynamic $\mathrm{R}_{\text{on}}$ Effect in GaN HEMT with p-GaN Gate

Dynamic On-Resistance Characterization of GaN Power HEMTs under Forward/Reverse Conduction Using Multigroup Double Pulse Test

Reverse Current Stress Induced Dynamic Ron of GaN HEMTs in Soft-Switching Mode

Study on the Dynamic R<sub>on</sub> Degradation in GaN-based Power HEMT

Third-Quadrant Conduction Induced Dynamic $\textit{r}_{\text{on}}$ Effect in GaN Gate-Injection-Transistor

Improved breakdown voltage and dynamic R on characteristics in normally-off GaN-based HEMTs featuring fully-recessed and bilayer-dielectric gate structure

IG- and VGS-Dependent Dynamic RON Characterization of Commercial High-Voltage P-Gan Gate Power HEMTs

Versatile Dynamic On-Resistance Test Bench for GaN Power Transistors with Considerations for Soft and Hard Switching, Time-Resolved Test, Packaged and On-Wafer Devices

Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling

Investigation of Temperature-Dependent Dynamic <i>R</i><sub>ON</sub> of GaN HEMT with Hybrid-Drain under Hard and Soft Switching

Dynamic On-state Resistance Test and Evaluation of GaN Power Devices under Hard and Soft Switching Conditions by Double and Multiple Pulses

Negative Dynamic RON in Vertical GaN PiN Diode: the Impact of Conductivity Modulation

Maximizing the Performance of 650-V P-Gan Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

ON-Resistance Analysis of GaN Reverse-Conducting HEMT with Distributive Built-In SBD

Dynamic $r_{\mathrm {ON}}$ of GaN-on-Si Lateral Power Devices with a Floating Substrate Termination

Dynamic OFF-State Current (dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ ) in ${p}$ -Gan Gate HEMTs with an Ohmic Gate Contact

Quantifying Dynamic On-State Resistance of GaN HEMTs for Power Converter Design via a Survey of Low and High Voltage Devices

Temperature-Dependent Dynamic Ron of GaN E-HEMTs: the Impact of P-Gan Drain

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure