Abstract:Gallium nitride (GaN) power devices enable power electronic systems with enhanced power density and efficiency. Dynamic on-resistance ( $R_{mathrm{scriptscriptstyle ON}}$ ) degradation (or current collapse), originating from buffer trapping, surface trapping and gate instability, has been regarded as a primary challenge for the lateral GaN-on-Si power devices. In this paper, we present an overview and discussion of the mechanisms, characterizations, modeling, and solutions for the degradation of dynamic $R_{mathrm{scriptscriptstyle ON}}$ in GaN power devices. The complex dynamics of acceptor/donor buffer traps and their impacts on dynamic $R_{mathrm{scriptscriptstyle ON}}$ have been analyzed and revealed by TCAD simulations and high-voltage back-gating measurements. The gate instability-induced dynamic $R_{mathrm{scriptscriptstyle ON}}$ increase in different GaN device technologies and the role of gate overdrive are also discussed. Wafer-level and board-level characterization techniques enabling accurate dynamic $R_{mathrm{scriptscriptstyle ON}}$ evaluation are reviewed. The dynamic $R_{mathrm{scriptscriptstyle ON}}$ performance of the state-of-the-art commercial GaN devices is presented, and a behavioral model with the dynamic $R_{mathrm{scriptscriptstyle ON}}$ degradation taken into consideration has been implemented for circuit analysis. The latest progress in GaN device technologies for enhanced dynamic performance is also reviewed and discussed.

Negative Dynamic RON in Vertical GaN PiN Diode: the Impact of Conductivity Modulation

Conductivity Modulation in Vertical GaN PiN Diode: Evidence and Impact

Reverse Conduction Induced Dynamic $\mathrm{R}_{\text{on}}$ Effect in GaN HEMT with p-GaN Gate

Investigation of Conductivity Modulation in Vertical GaN-on-GaN PiN Diode under High Current Density

Dynamic Ron Effect in GaN HEMT in a Zero-Voltage-Switching Circuit Due to Off-Resonance Operation

Dynamic On-Resistance Characterization of GaN Power HEMTs under Forward/Reverse Conduction Using Multigroup Double Pulse Test

Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling

Time/Current-Dependent Surge Current Capability of Fully-Vertical GaN-on-GaN PiN Diode with Conductivity Modulation

Dynamic $r_{\mathrm {ON}}$ of GaN-on-Si Lateral Power Devices with a Floating Substrate Termination

Third-Quadrant Conduction Induced Dynamic $\textit{r}_{\text{on}}$ Effect in GaN Gate-Injection-Transistor

Temperature-Dependent Dynamic Ron of GaN E-HEMTs: the Impact of P-Gan Drain

Study on the Dynamic R<sub>on</sub> Degradation in GaN-based Power HEMT

Reverse Current Stress Induced Dynamic Ron of GaN HEMTs in Soft-Switching Mode

Improved breakdown voltage and dynamic R on characteristics in normally-off GaN-based HEMTs featuring fully-recessed and bilayer-dielectric gate structure

Surge Current Ruggedness in Vertical GaN-on-GaN PiN Diode: Role of Conductivity Modulation

Investigation of Temperature-Dependent Dynamic <i>R</i><sub>ON</sub> of GaN HEMT with Hybrid-Drain under Hard and Soft Switching

IG- and VGS-Dependent Dynamic RON Characterization of Commercial High-Voltage P-Gan Gate Power HEMTs

Direct observation of radio-frequency negative differential resistance in GaN-based single drift region IMPATT diodes

Current-controlled Negative Differential Resistance Effect Induced by Gunn-type Instability in N-Type GaN Epilayers

Photon-Enhanced Conductivity Modulation and Surge Current Capability in Vertical GaN Power Rectifiers

Impact of substrate termination on dynamic performance of GaN-on-Si lateral power devices