Evaluation and Analysis of Temperature-Dependent Dynamic $r_{{{\mathrm{ds}}},{{\mathrm{on}}}}$ of GaN Power Devices Considering High-Frequency Operation
Yuan Li,Yuanfu Zhao,Alex Q. Huang,Liqi Zhang,Yang Lei,Ruiyang Yu,Qingxuan Ma,Qingyun Huang,Soumik Sen,Yunpeng Jia,Yunlong He
DOI: https://doi.org/10.1109/jestpe.2019.2947575
IF: 5.462
2019-01-01
IEEE Journal of Emerging and Selected Topics in Power Electronics
Abstract:Commercial enhancement-mode gallium nitride (GaN) HEMTs device is a superior candidate for high-frequency power electronics applications. However, GaN power devices have a unique dynamic RDS, ON problem which increases the conduction loss of the converter during operation. In this article, the temperature-dependent dynamic RDS, ON at high frequency is evaluated experimentally for the first time using the double-pulse test (DPT) and multiple-pulse test (MPT) techniques. Different temperature-dependent dynamic RDS, ON characteristics between the DPT and the MPT at high temperatures are investigated. The significance of the dynamic RDS,ON's temperature dependence is important since GaN devices are typically operating at elevated temperatures. The results suggest that the traditional waferlevel test method using one pulse or two pulses and the MPT without heating consideration or at lower pulse frequency may not be sufficient to evaluate the dynamic RDS, ON effect. Combined with high-frequency, high-voltage, and high-current stress, high operating temperatures result in severe RDS, ON degradation; hence, there is a diminished return on operating the devices at high temperatures.