Versatile Dynamic On-Resistance Test Bench for GaN Power Transistors with Considerations for Soft and Hard Switching, Time-Resolved Test, Packaged and On-Wafer Devices

Yunhong Lao,Muqin Nuo,Qian Zheng,Jiawei Cui,Junjie Yang,Sihang Liu,Bo Shen,Meng Zhang,Maojun Wang,Jin Wei

DOI: https://doi.org/10.1109/ispsd59661.2024.10579556

2024-01-01

Abstract:In this work, we develop a dynamic R-ON test bench for GaN HEMT based on two half-bridge pulse generating circuits, enabling versatile selection of soft switching (SSW) and hard switching (HSW) test, allowing long-duration test, and supporting both packaged large-area devices and on-wafer smallsize devices. For packaged devices, under SSW test, Schottky-gate p-GaN HEMT (SG-HEMT) exhibit a bell-shaped dynamic R-ON and V-DS curve, while the ohmic-gate p-GaN HEMT (GIT) and Si superjunction (SJ-) MOSFET exhibit stable dynamic RON. Under HSW test, the dynamic R-ON of SG-HEMT and GIT are both slightly higher than SSW test. The hard-switching energy (E-HSW) is controlled by a capacitor CHSW. During 1-hour continuous SSW and HSW test, the dynamic R-ON of GaN HEMT increases gradually and saturates. The on-wafer device in this work is an active-passivation HEMT (AP-HEMT) with W-G = 10.m. The SSW dynamic R-ON of AP-HEMT, extracted with a delay time of similar to 20 mu s, is comparable to that of the-state-of-the-art commercial GaN transistor using the same testing condition.