Abstract:Emerging GaN high electron mobility transistors have become a popular choice in high-efficiency, high-speed power circuits, owing to superb switching figure of merits. However, as a new type of power devices, aging/failure mechanisms of such are far less studied than silicon counterparts, making reliability one of the most formidable obstacles towards mass production. To mitigate this, device online condition monitoring is highly desirable, in which dynamic on-resistance, dRON, is popularly employed as an aging precursor. However, continuous and drastic changes of operation condition and switching dynamics make it highly challenging to measure dRON online accurately. To address such, this article introduces an integrated dRON full profile scan and offset calibration approach that allows GaN power devices to be monitored online without interrupting normal operation of device under test (DUT), making it a desirable plug-and-play solution to virtually all GaN-based power circuits. To facilitate superior speed and low-power performance, this article is implemented on a highly silicon- and power-efficient integrated circuit, which calibrates random offsets and sensing errors automatically to ensure condition monitoring accuracy. Demonstrated in a half-bridge GaN-based power converter, where the gate drivers and the feedback controller are fully integrated on a 180-nm high voltage bipolar-CMOS-DMOS (BCD) process, the proposed online condition monitoring solution consumes only 1.1 mW power and 0.3 mm2 chip area, which account for 0.077% power and 4.8% chip overhead, respectively. It reduces offset and parasitic induced sensing errors by 13.6%.

Dynamic On-state Resistance Evaluation of GaN Devices under Hard and Soft Switching Conditions

Dynamic On-state Resistance Test and Evaluation of GaN Power Devices under Hard and Soft Switching Conditions by Double and Multiple Pulses

Dynamic RDS(on) Testing for GaN Devices Considering Third Quadrant and Different Operating Conditions

Versatile Dynamic On-Resistance Test Bench for GaN Power Transistors with Considerations for Soft and Hard Switching, Time-Resolved Test, Packaged and On-Wafer Devices

Dynamic On-Resistance Characterization of GaN Power HEMTs under Forward/Reverse Conduction Using Multigroup Double Pulse Test

Dynamic ON-Resistance Characterization of GaN HEMT Under Soft-Switching Condition

Mechanism Analysis of Dynamic On-State Resistance Degradation for a Commercial GaN HEMT Using Double Pulse Test

Quantifying Dynamic On-State Resistance of GaN HEMTs for Power Converter Design via a Survey of Low and High Voltage Devices

Voltage Slew Rate Design with Soft Switching Technique

Reliability-Driven Assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV Inverters

Evaluation and Analysis of Temperature-Dependent Dynamic $r_{{{\mathrm{ds}}},{{\mathrm{on}}}}$ of GaN Power Devices Considering High-Frequency Operation

Reverse Current Stress Induced Dynamic Ron of GaN HEMTs in Soft-Switching Mode

Study on the Dynamic R<sub>on</sub> Degradation in GaN-based Power HEMT

Investigation of Saturated RON on GaN Power HEMTs by a Re-Configurable Continuous Switching Platform

IG- and VGS-Dependent Dynamic RON Characterization of Commercial High-Voltage P-Gan Gate Power HEMTs

Investigation of Temperature-Dependent Dynamic <i>R</i><sub>ON</sub> of GaN HEMT with Hybrid-Drain under Hard and Soft Switching

Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling

Temperature‐dependent Dynamic R DS,ON under Different Operating Conditions in Enhancement‐mode GaN HEMTs

A Study on the Dynamic Switching Characteristics of p-GaN HEMT Power Devices

Dynamic Gate Breakdown of P-Gate GaN HEMTs in Inductive Power Switching

Online Condition Monitoring for GaN Power Devices With Integrated Dynamic On-Resistance Full Profile Scan and Offset Calibration