Abstract:Emerging GaN high electron mobility transistors have become a popular choice in high-efficiency, high-speed power circuits, owing to superb switching figure of merits. However, as a new type of power devices, aging/failure mechanisms of such are far less studied than silicon counterparts, making reliability one of the most formidable obstacles towards mass production. To mitigate this, device online condition monitoring is highly desirable, in which dynamic on-resistance, dRON, is popularly employed as an aging precursor. However, continuous and drastic changes of operation condition and switching dynamics make it highly challenging to measure dRON online accurately. To address such, this article introduces an integrated dRON full profile scan and offset calibration approach that allows GaN power devices to be monitored online without interrupting normal operation of device under test (DUT), making it a desirable plug-and-play solution to virtually all GaN-based power circuits. To facilitate superior speed and low-power performance, this article is implemented on a highly silicon- and power-efficient integrated circuit, which calibrates random offsets and sensing errors automatically to ensure condition monitoring accuracy. Demonstrated in a half-bridge GaN-based power converter, where the gate drivers and the feedback controller are fully integrated on a 180-nm high voltage bipolar-CMOS-DMOS (BCD) process, the proposed online condition monitoring solution consumes only 1.1 mW power and 0.3 mm2 chip area, which account for 0.077% power and 4.8% chip overhead, respectively. It reduces offset and parasitic induced sensing errors by 13.6%.

Dynamic RDS(on) Testing for GaN Devices Considering Third Quadrant and Different Operating Conditions

Dynamic On-state Resistance Evaluation of GaN Devices under Hard and Soft Switching Conditions

Dynamic On-state Resistance Test and Evaluation of GaN Power Devices under Hard and Soft Switching Conditions by Double and Multiple Pulses

Dynamic On-Resistance Characterization of GaN Power HEMTs under Forward/Reverse Conduction Using Multigroup Double Pulse Test

Versatile Dynamic On-Resistance Test Bench for GaN Power Transistors with Considerations for Soft and Hard Switching, Time-Resolved Test, Packaged and On-Wafer Devices

Third-Quadrant Conduction Induced Dynamic $\textit{r}_{\text{on}}$ Effect in GaN Gate-Injection-Transistor

Reliability-Driven Assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV Inverters

Evaluation and Analysis of Temperature-Dependent Dynamic $r_{{{\mathrm{ds}}},{{\mathrm{on}}}}$ of GaN Power Devices Considering High-Frequency Operation

Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling

Study on the Dynamic R<sub>on</sub> Degradation in GaN-based Power HEMT

Dynamic Ron Effect in GaN HEMT in a Zero-Voltage-Switching Circuit Due to Off-Resonance Operation

Reverse Current Stress Induced Dynamic Ron of GaN HEMTs in Soft-Switching Mode

Quantifying Dynamic On-State Resistance of GaN HEMTs for Power Converter Design via a Survey of Low and High Voltage Devices

Mechanism Analysis of Dynamic On-State Resistance Degradation for a Commercial GaN HEMT Using Double Pulse Test

Temperature‐dependent Dynamic R DS,ON under Different Operating Conditions in Enhancement‐mode GaN HEMTs

Study on Thermal Transient Measurement Method and Mechanism of GaN HEMT Power Devices

Online Condition Monitoring for GaN Power Devices With Integrated Dynamic On-Resistance Full Profile Scan and Offset Calibration

Dynamic ON-Resistance Characterization of GaN HEMT Under Soft-Switching Condition

A Normalized Quantitative Method for GaN HEMT Turn-ON Overvoltage Modeling and Suppressing

Test Methods and Principles of Thermal Resistance for GaN HEMT Power Devices

Third Quadrant Overvoltage Ruggedness of P-Gate GaN HEMTs