Abstract:In this paper, we report the device performance of a high-voltage enhancement-mode (E-mode) GaN MOSHEMT on silicon substrate. Normally off operation is realized by a self-terminated precision gate recess process on an optimized high-electron mobility transistor structure. The GaN MOSHEMT is fully pinched off at zero gate bias, suggesting a “true” normally off operation. The threshold voltage is 0.4 V with a drain current density of 1 $\mu \text{A}$ /mm as the criteria. The device with 15- $\mu \text{m}$ gate-drain distance and 100- $\mu \text{m}$ gate width exhibits a maximum drain current of 356 mA/mm at 8-V gate bias. The on/off current ratio of the device is larger than 1010 with a subthreshold slope of 80 mV/dec. The gate leakage current is below 10−7 mA/mm up to 9-V gate bias. The off-state breakdown voltage (BV) is as high as 1528 V (880 V) measured with floating (grounded) silicon substrate at a drain leakage current criterion of 5 $\mu \text{A}$ /mm. The specific on-resistance ( ${R}_{\text {ON,SP}}$ ) of the device is 2.79 $\text{m}\Omega \cdot$ cm2, and the power figure of merit (BV2/ ${R}_{ \text {ON,SP}}$ ) is 277 MW/cm2. High-voltage pulsed I–V measurement indicates that the dynamic on-resistance is only 1.6 times the static one with a pulsewidth of 10 $\mu \text{s}$ at 400-V off-state quiescent drain bias. The high performance of the normally off GaN MOSHEMT is supposed to benefit from the high quality low pressure chemical vapor deposition Si3N4 passivation layer and the advanced E-mode device fabrication process.

Dynamic $r_{\mathrm {ON}}$ of GaN-on-Si Lateral Power Devices with a Floating Substrate Termination

Impact of substrate termination on dynamic performance of GaN-on-Si lateral power devices

Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling

GaN-on-Si lateral power devices with symmetric vertical leakage: The impact of floating substrate

Study on the Dynamic R<sub>on</sub> Degradation in GaN-based Power HEMT

Dynamic On-Resistance Characterization of GaN Power HEMTs under Forward/Reverse Conduction Using Multigroup Double Pulse Test

Dynamic OFF-State Current (dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ ) in ${p}$ -Gan Gate HEMTs with an Ohmic Gate Contact

Substrate Effects in GaN-on-Si Integrated Bridge Circuit and Proposal of Engineered Bulk Silicon Substrate for GaN Power ICs

Reverse Conduction Induced Dynamic $\mathrm{R}_{\text{on}}$ Effect in GaN HEMT with p-GaN Gate

IG- and VGS-Dependent Dynamic RON Characterization of Commercial High-Voltage P-Gan Gate Power HEMTs

GaN Integrated Bridge Circuits on Bulk Silicon Substrate: Issues and Proposed Solution

Investigation of Temperature-Dependent Dynamic <i>R</i><sub>ON</sub> of GaN HEMT with Hybrid-Drain under Hard and Soft Switching

Third-Quadrant Conduction Induced Dynamic $\textit{r}_{\text{on}}$ Effect in GaN Gate-Injection-Transistor

Dynamic Ron Effect in GaN HEMT in a Zero-Voltage-Switching Circuit Due to Off-Resonance Operation

Effects of Substrate Termination on Reverse-bias Stress Reliability of Normally-off Lateral GaN-on-Si MIS-FETs

Buffer trapping-induced R<inf>ON</inf> degradation in GaN-on-Si power transistors: Role of electron injection from Si substrate

TCAD Study on Suppression of Substrate-Induced Degradation in GaN-on-Si Integrated Half-Bridge Circuit by Local Si Lateral Etch

Characterization of 880 V Normally off GaN MOSHEMT on Silicon Substrate Fabricated with a Plasma-Free, Self-Terminated Gate Recess Process

Versatile Dynamic On-Resistance Test Bench for GaN Power Transistors with Considerations for Soft and Hard Switching, Time-Resolved Test, Packaged and On-Wafer Devices

Negative Dynamic RON in Vertical GaN PiN Diode: the Impact of Conductivity Modulation

Temperature-Dependent Dynamic Ron of GaN E-HEMTs: the Impact of P-Gan Drain