IG- and VGS-Dependent Dynamic RON Characterization of Commercial High-Voltage P-Gan Gate Power HEMTs

Kailun Zhong,Jin Wei,Jiabei He,Sirui Feng,Yuru Wang,Song Yang,Kevin J. Chen

DOI: https://doi.org/10.1109/tie.2021.3104592

IF: 7.7

2022-01-01

IEEE Transactions on Industrial Electronics

Abstract:The dynamic on-resistance (r(ON)) of two mainstream 600 V/650 V p-GaN gate power high-electron-mobility transistors (HEMTs) with Ohmic- and Schottky-type p-GaN gate contacts are characterized under the hard-switching condition and show strong dependences on the gate driving conditions under both double-pulse and multipulse testing modes. The statistical measurement of multiple samples indicates this is a representative phenomenon in these two types of commercial p-GaN gate power HEMTs. For Ohmic-type p-GaN gate HEMT, gate injection current (I-G) at the on state from the p-GaN gate facilitates a faster detrapping process and contributes to a smaller dynamic r(ON). For Schottky-type p-GaN gate HEMT, the dynamic r(ON) shows a strong dependence on the gate overdrive voltage (V-GS) because the higher V-GS can compensate the increase in dynamic r(ON) induced by the positively shifted V-TH under high drain bias. A larger I-G (from 1.2 to 22 mA) and higher V-GS (from 5 to 7 V) play the most important role in suppressing the dynamic r(ON) under high switching frequency and high drain bias condition (i.e., 400 kHz/400 V), where the reduction of dynamic r(ON) is 13.6% and 17.1% for Ohmic-type and Schottky-type p-GaN gate HEMTs, respectively.