Abstract:The leakage current suppression mechanism in AlGaN/GaN High Electron Mobility Transistors (HEMTs) is investigated. It is known that leakage current can cause severe reliability problems for HEMT devices and conventional AlGaN/GaN HEMT devices suffer from detrimental off-state drain leakage current issues, especially under high off-state drain bias. Therefore, a leakage current suppression technique featuring hybrid-Schottky/ohmic-drain contact is discussed. Through the 2-zones leakage current suppression mechanism by the hybrid-Schottky/drain metal including the shielding effect of the rough ohmic-drain metal morphology and the drain side electric field modulation, AlGaN/GaN HEMT featuring this novel technique can significantly enhance the leakage current suppression capability and improve the breakdown voltage. An analytical method using loop-voltage-scanning is proposed to illustrate the optimization procedure of the hybrid-Schottky/ohmic drain metallization on leakage current suppression. Through the comparison of the loop leakage current hysteresis of conventional ohmic drain HEMT and hybrid-Schottky/ohmic drain, the leakage current suppression mechanism is verified through the leakage current considering surface acceptor-like trap charging/discharging model. Device featuring the hybrid-Schottky/ohmic drain technique shows an improvement in breakdown voltage from 450 V (with no Schottky drain metal) to 855 V with a total drift region length of 9 mu m, indicating enhanced off-state reliability characteristics for the AlGaN/GaN HEMT devices. (C) 2014 Elsevier Ltd. All rights reserved.

Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs

Electrical Degradation of In Situ SiN/AlGaN/GaN MIS-HEMTs Caused by Dehydrogenation and Trap Effect Under Hot Carrier Stress

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Surface Acceptor-Like Trap Model for Gate Leakage Current Degradation in Lattice-Matched Inaln/Gan Hemts

Buffer-Induced Time-Dependent OFF-State Leakage in AlGaN/GaN High Electron Mobility Transistors on Silicon

Charge Trapping Related Channel Modulation Instability in P-GaN Gate HEMTs.

High-field-induced Electron Detrapping in an AlGaN/GaN High Electron Mobility Transistor

Charge Detrapping on Gate Edge of AlGaN/GaN HEMT Under Drain Stress

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

Study on the Electrical Degradation of AlGaN/GaN MIS-HEMTs Induced by Residual Stress of SiNx Passivation

Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress

Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices

Degradation Behavior and Trap Analysis Based on Low-Frequency Noise of AlGaN/GaN HEMTs Subjected to Radio Frequency Overdrive Stress

Analysis of Algan/Gan High Electron Mobility Transistors Failure Mechanism under Semi-On Dc Stress

Study of Current Collapse Behaviors of Dual-Gate AlGaN/GaN HEMTs on Si

Study of the Leakage Current Suppression for Hybrid-Schottky/ohmic Drain AlGaN/GaN HEMT

Study on the Charging Current of Surface Traps in AlGaN/GaN High Electron Mobility Transistors with a Slot Gate Structure

Effect of Source Electrostatic Interaction on the Off-State Leakage Current of p-GaN Gate HEMTs

Gate Current Transport in Enhancement-Mode P-N Junction/AlGaN/GaN (PNJ) HEMT

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Gate Reliability and its Degradation Mechanism in the Normally OFF High-Electron-Mobility Transistors With Regrown p-GaN Gate