Abstract:A two-dimensional electron gas (2DEG) in (Al, Ga) N/GaN heterojunction (AlGaN/GaN) is a key factor that affects the performance of GaN-based high electron mobility transistor (HEMT) devices. Previous studies have shown that the ferroelectric polarization can effectively control the density of the 2DEG at the AlGaN/GaN interface; however, the correlation between two-dimensional distribution of ferroelectric polarization (i.e., ferroelectric domains) and its ability to confine the 2DEG is yet to be investigated. In this work, ferroelectric domain-induced modulation of the 2DEG in the AlGaN/GaN heterostructure was characterized using microscopic as well as local transport measurement techniques. The results suggest direct evidence for effective ferroelectric domain engineering in GaN HEMTs, as predicted by theoretical calculations. Additionally, a prototype device was fabricated, where gating was realized by utilizing the polarization of the ferroelectric domain. Considering the nonvolatile and reconfigurable advantages of a ferroelectric domain, the E-mode, D-mode, and even multi-channel output characteristics were realized in the same device by artificially engineered ferroelectric domain structures. These results offer a promising solution for the contradiction between the 2DEG density and gate controllability in GaN HEMTs, thereby showing a great potential of GaN radio frequency devices with further scaled gate lengths down to a few nanometers in the future.

Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section

Analytical Model for AlGaN/GaN High Electron Mobility Transistor

Study on transconductance non-linearity of AlGaN/GaN HEMTs considering acceptor-like traps in barrier layer under the gate

Spatially-resolved Spectroscopic Measurements of Ec − 0.57 Ev Traps in AlGaN/GaN High Electron Mobility Transistors

Low-Frequency Noise Due to Iron Impurity Centers in GaN-Based HEMTs

Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs

Impact of Residual Carbon Impurities and Gallium Vacancies on Trapping Effects in AlGaN/GaN MIS-HEMTs

Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs

Decoupling of epitaxy related trapping effects in AlGaN/GaN metal-insulator semiconductor high electron mobility transistors

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

The Dynamic Modulation Doping Effect of Gas Molecules on an AlGaN/GaN Heterojunction Surface

High-field-induced Electron Detrapping in an AlGaN/GaN High Electron Mobility Transistor

A Novel Insight on Interface Traps Density (Dit) Extraction in GaN-on-Si MOS-c HEMTs

Deep Level Centers in Carbon-Doped High Resistivity GaN

Fabrication of AlGaN/GaN High-Electron-mobility Transistors

Investigation of Carrier Compensation Traps in N−-Gan Drift Layer by High-Temperature Deep-Level Transient Spectroscopy

Distribution of Deep-Level Traps at Atomic-Layer-deposited Al2O3/n-GaN Interface

Negative Transconductance Effect in P-Gan Gate AlGaN/GaN HEMTs by Traps in Unintentionally Doped GaN Buffer Layer*

Experimentation and Simulation for Cap Gate AlGaN/GaN HEMT Power Devices

Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized P‐gan Gate AlGaN/GaN HEMTs

Ferroelectric domain modulated AlGaN/GaN field effect transistor