Abstract:The small-signal S parameters of the fabricated double-finger gate AlGaN/GaN high electron mobility transistors (HEMTs) were measured at various direct current quiescent operating points (DCQOPs). Under active bias conditions, small-signal equivalent circuit (SSEC) parameters such as Rs and Rd, and intrinsic parameters were extracted. Utilizing fT and the SSEC parameters, the effective electron velocity (νe−eff) and intrinsic electron velocity (νe−int) corresponding to each gate bias (VGS) were obtained. Under active bias conditions, the influence mechanism of VGS on νe−eff was systematically studied, and an expression was established that correlates νe−eff, νe−int, and bias-dependent parasitic resistances. Through the analysis of the main scattering mechanisms in AlGaN/GaN HEMTs, it has been discovered that the impact of VGS on νe−eff should be comprehensively analyzed from the aspects of νe−int and parasitic resistances. On the one hand, changes in VGS influence the intensity of polar optical phonon (POP) scattering and polarization Coulomb field (PCF) scattering, which lead to changes in νe−int dependent on VGS. The trend of νe−int with changes in VGS plays a dominant role in determining the trend of νe−eff with changes in VGS. On the other hand, both POP scattering and PCF scattering affect νe−eff through their impact on parasitic resistance. Since there is a difference in the additional scattering potential corresponding to the additional polarization charges (APC) between the gate-source/drain regions and the region under the gate, the mutual effects of PCF scattering on the under-gate electron system and the gate-source/drain electron system should be considered when adjusting the PCF scattering intensity through device structure optimization to improve linearity. This study contributes to a new understanding of the electron transport mechanisms in AlGaN/GaN HEMTs and provides a novel theoretical basis for improving device performance.

Gate-Voltage Independence of Electron Mobility in Power Algan/Gan Hemts

Measurement of piezoresistance coefficient with different gate voltages of GaN HEMT micro-accelerometer

Effect of Electric Field On Electron Mobility in Sub-100 nm InAlN/GaN High Electron Mobility Transistors

A method for extraction of electron mobility in power HEMTs

Simulation study on electrical properties of p-GaN gate normally-off HEMT devices affected by Al mole fraction in AlGaN barrier layer

1/F Noise in As-Processed and Proton-Irradiated Algan/Gan Hemts Due to Carrier Number Fluctuations

Effective gate length determination of AlGaN/GaN HEMTs from direct measurements of thermal signatures

Modelling Temperature Dependence on AlGaN/GaN Power HEMT Device Characteristics

Temperature‐Dependent Characteristics of AlGaN/GaN Nanowire Channel High Electron Mobility Transistors

A Physics-Based Compact Direct-Current and Alternating-Current Model for AlGaN/GaN High Electron Mobility Transistors

Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures

The Power Law of Phonon-Limited Electron Mobility in the 2-D Electron Gas of AlGaN/GaN Heterostructure

Influence of the Bias Voltage on Effective Electron Velocity in AlGaN/GaN High Electron Mobility Transistors

An ASM-Based Semiempirical Model for AlGaN/GaN Power HEMTs with P-Gan Gate

Gate Leakage Mechanisms in Normally off P-Gan/algan/gan High Electron Mobility Transistors

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation

The Effect Of The Gate-Drain Distance On High Frequency And Noise Performance For Algan/Gan Hemt

Electron Mobility in InGaN Channel Heterostructure Field Effect Transistor Structures with Different Barriers

Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT