Abstract:We develop an analytical model for the Direct-Current (DC) and capacitance-voltage (CV) characteristics of AlGaN/GaN High Electron Mobility Transistors (HEMTs), providing accurate predictions of the transconductance and the gate capacitance in both linear and velocity saturation regions. The models provide an accurate and smooth connection in the area near the knee point for the DC characteristics, which is attributed to precise descriptions of the channel charge. An accurate model for the low-field mobility of the two dimensional electron gases (2DEG) has been developed, considering the nonmonotonic dependence of the carrier velocity on the electric field perpendicular to the channel for the first time. The calculated transconductance and output conductance are proved accurate and to have high order continuity, especially in large voltage biases, which is hard for some other analytical or numeral models. The gate capacitance has been obtained analytically and verified by experimental data. The slight decrease in the measured gate-to-source capacitance over the velocity saturation region which indicates the results of neutralization of donors and the contribution of the free electron in the AlGaN layer has been modeled accurately and smoothly for the first time. The predicted cut-off frequency is in excellent agreements with measured data over the full range of applied biases. The models are implemented into the HSPICE simulator for the DC, AC and transient simulations, with good speed and convergence characteristics.

A Physics-Based Compact Direct-Current and Alternating-Current Model for AlGaN/GaN High Electron Mobility Transistors

Analytical Model for AlGaN/GaN High Electron Mobility Transistor

A Simplification Method for Capacitance Models in AlGaN / GaN High Electron Mobility Transistors under Large Drain Voltage Using Channel Analysis

Physics-Based Compact Model for AlGaN/GaN MODFETs with Close-Formed $I$ – $V$ and $C$ – $V$ Characteristics

Analytical Gate Capacitance Models for Large-Signal Compact Model of AlGaN/GaN HEMTs

Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs

A Scalable Multiharmonic Surface-Potential Model of AlGaN/GaN HEMTs

Model the AlGaN/GaN high electron mobility transistors

2-D Analytical Model for Current–Voltage Characteristics and Transconductance of AlGaN/GaN MODFETs

A Surface-Potential-Based Model For Algan/Aln/Gan Hemt

An Explicit Surface Potential Calculation and Compact Current Model for AlGaN/GaN HEMTs

Scalable Multi-harmonic Large-Signal Model for AlGaN/GaN HEMTs Including a Geometry-Dependent Thermal Resistance

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

A Threshold‐Voltage and Drain–Source Current Model for Double‐Channel AlxGa1−xN/GaN/AlyGa1−yN/GaN High‐Electron‐Mobility Transistors

Analytical Surface Potential Based Model for Alxga1-Xn/Alyga1-Yn/Gan Dh Hemts

Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components

A Difference-Microvariation Solution and Analytical Model for Generic HEMTs

A Quasi-Physical Compact Large-Signal Model for AlGaN/GaN HEMTs

A New Compact Model for AlGaN/GaN HEMTs Including Self-Heating Effects

Physics-based modeling of gate-leakage current in AlGaN/GaN high electron mobility transistors

A New Small-Signal Model For Asymmetrical Algan/Gan Hemts