Abstract:We develop an analytical model for the Direct-Current (DC) and capacitance-voltage (CV) characteristics of AlGaN/GaN High Electron Mobility Transistors (HEMTs), providing accurate predictions of the transconductance and the gate capacitance in both linear and velocity saturation regions. The models provide an accurate and smooth connection in the area near the knee point for the DC characteristics, which is attributed to precise descriptions of the channel charge. An accurate model for the low-field mobility of the two dimensional electron gases (2DEG) has been developed, considering the nonmonotonic dependence of the carrier velocity on the electric field perpendicular to the channel for the first time. The calculated transconductance and output conductance are proved accurate and to have high order continuity, especially in large voltage biases, which is hard for some other analytical or numeral models. The gate capacitance has been obtained analytically and verified by experimental data. The slight decrease in the measured gate-to-source capacitance over the velocity saturation region which indicates the results of neutralization of donors and the contribution of the free electron in the AlGaN layer has been modeled accurately and smoothly for the first time. The predicted cut-off frequency is in excellent agreements with measured data over the full range of applied biases. The models are implemented into the HSPICE simulator for the DC, AC and transient simulations, with good speed and convergence characteristics.

An Improved DC Model for AlGaN/GaN HEMTs

An Improved Analytical Model of GaN HEMT in Cascode Configuration During Turn-on Transition

Analytical Model for AlGaN/GaN High Electron Mobility Transistor

An improved small‐signal model for GaN HEMTs devices

A New Empirical I-V Model for AlGaN/GaN HEMT Devices

A Physics-Based Compact Direct-Current and Alternating-Current Model for AlGaN/GaN High Electron Mobility Transistors

An Improved Nonlinear I‐V Model for GaN HEMTs

An enhanced AlGaN/GaN HEMTs large-signal model with parameter extraction methodology

An ASM-Based Semiempirical Model for AlGaN/GaN Power HEMTs with P-Gan Gate

Model the AlGaN/GaN high electron mobility transistors

An 1-4;nhanced AlGaN/GaN HEMTs Large-Signal Model with Parameter Fxtraction Methodology

A Scalable Multiharmonic Surface-Potential Model of AlGaN/GaN HEMTs

An Improved Large-signal Model of AlGaN/GaN HEMT Considering Self-heating Effect

Improved Drain-Source Current Model for HEMT's with Accurate Gm Fitting in All Regions

Effect of Device Geometry on Static and Dynamic Performance of AlGaN/GaN-on-Si High Electron Mobility Transistor

A Surface Potential Large Signal Model for AlGaN/GaN HEMTs

Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer

A new analytical high frequency noise parameter model for AlGaN/GaN HEMT

An Improved ASM-HEMT Model for Kink Effect on GaN Devices

2-D Analytical Model for Current–Voltage Characteristics and Transconductance of AlGaN/GaN MODFETs

Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances