Abstract:An accurate physical model for GaN high-electron-mobility-transistors (HEMTs) device is imperative and crucial for circuit design and technology optimization. In this paper, a scalable large-signal surface-potential (SP) model of AlGaN/GaN HEMTs is presented. The drain current model is capable of accurately modeling the self-heating effect and trapping effect. The self-heating effect is modeled by embedding temperature increment into free-carrier mobility model, and the trapping effect is modeled by introducing an indirect variable effective gate voltage V-gseff. Moreover, the scaling and multiharmonic characteristics of the SP model are studied for the first time. The geometry-dependent thermal resistance R-ths is identified by the electrothermal finite-element method simulations, which is scalable with the gate width W and power dissipations P-diss of the device. Single-tone on-wafer load-pull measurements at operating frequency 8 GHz is carried out for verification purpose. Accurate predictions of the static (dc) I-V, pulsed-gate-and-drain I - V, S-parameters up to 40 GHz and large-signal harmonic performance (the fundamental, second-and third-harmonics output power, and power-added efficiency) for the devices with different gate peripheries have been achieved by the proposed model. The results of this paper can pave the way for the full application of the physical-based model in circuits design.

An Improved Large-signal Model of AlGaN/GaN HEMT Considering Self-heating Effect

An Improved Analytical Model of GaN HEMT in Cascode Configuration During Turn-on Transition

Enhanced GaN HEMT large-signal model with self-heating and trapping effects for power amplifier design

Thermal modeling, analysis, and management of high-power GaN transistors

Analytical Model for AlGaN/GaN High Electron Mobility Transistor

An Analytical Model for Current–voltage Characteristics of AlGaN/GaN HEMTs in Presence of Self-Heating Effect

An enhanced AlGaN/GaN HEMTs large-signal model with parameter extraction methodology

An Improved Nonlinear I‐V Model for GaN HEMTs

A Scalable Multiharmonic Surface-Potential Model of AlGaN/GaN HEMTs

An 1-4;nhanced AlGaN/GaN HEMTs Large-Signal Model with Parameter Fxtraction Methodology

An Improved DC Model for AlGaN/GaN HEMTs

High Frequency Noise Model of AlGaN/GaN HEMTs

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Modelling Temperature Dependence on AlGaN/GaN Power HEMT Device Characteristics

Numerical Simulation of AlXGa1-XN/AlN/GaN HEMT

Three-dimensional modeling of AlGaN/GaN HEMT including electro-thermal coupling effects

Models for the self-heating evaluation of a gallium nitride-based high electron mobility transistor

An ASM-Based Semiempirical Model for AlGaN/GaN Power HEMTs with P-Gan Gate

Analytical Modelling of High Temperature Characteristics on the DC Responses for Schottky-gate AlGaN/GaN HEMT Devices

Electro-Thermal Simulation of GaN HEMT by Finite Element Method