Abstract:Due to the advantages of high power density, high efficiency, and great potential in extreme temperature environments, the GaN high electron mobility transistor (HEMT) device is widely used in circuit systems at high or low temperatures. However, its electrical performance is sensitive to the ambient temperature. Therefore, it is essential to build a model that can accurately characterize the electrical performance of GaN HEMTs at different ambient temperatures, which is also essential for precise circuit design. With the analysis of experiment and theory on the GaN HEMT at different ambient temperatures, an improved model for temperature effect on the DC characteristics of the GaN HEMT is proposed based on EEHEMT model. Considering the influence of the ambient temperature on electrical properties of the GaN HEMT, such as the threshold voltage, the knee voltage, and the saturated current, the model establishes a temperature-dependent function for key parameters in the formula of the drain-source current. Through Verilog-A implementation and simulation on the ICCAP software, the improved model accurately reflects the trend of the electrical performance changes of the GaN HEMT at different ambient temperatures. To further verify the model in this work, the on-wafer measurements at different temperatures including -55, -25, 25 and 75 degrees C are carried out for GaN HEMTs with different sizes, which are developed by Nanjing Electronic Devices Institute. Compared with the measured data, the output characteristics and the transfer characteristics simulated by the proposed model are accurate in an ambient temperature range of -55-75 degrees C, with a relative fitting error less than 5%. The result shows that the improved model is of guiding significance in analyzing the direct current performance and high reliability design of circuits at different temperatures.

High Frequency Noise Model of AlGaN/GaN HEMTs

A new analytical high frequency noise parameter model for AlGaN/GaN HEMT

Analytical Model for AlGaN/GaN High Electron Mobility Transistor

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Modelling Temperature Dependence on AlGaN/GaN Power HEMT Device Characteristics

The Effect Of The Gate-Drain Distance On High Frequency And Noise Performance For Algan/Gan Hemt

An Improved Noise Modeling Method Using a Quasi-Physical Zone Division Model for AlGaN/GaN HEMTs

A Scalable Multiharmonic Surface-Potential Model of AlGaN/GaN HEMTs

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Modeling of Temperature Effect on DC Characteristics of Micro Wave GaN Devices

Microwave noise characteristics of AlGaN/GaN HEMTs on high-resistivity silicon substrate

Analytical Modelling of High Temperature Characteristics on the DC Responses for Schottky-gate AlGaN/GaN HEMT Devices

Noise Performance In Algan/Gan Hemts Under High Drain Bias

An improved noise model of InP HEMT for millimeter wave application

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Effect of Device Geometry on Static and Dynamic Performance of AlGaN/GaN-on-Si High Electron Mobility Transistor

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The degradation mechanism of high power S-band AlGaN/GaN HEMTs under high temperature

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Improvement of Small Signal Modeling and Parameter Extraction for AlGaN/GaN High Electron Mobility Transistor