Abstract:In this paper, the p-GaN gate AlGaN/GaN high electron mobility transistors (HEMTs) with varying combinations of gate metal work function and gate geometry are fabricated and investigate the influence of gate leakage current (IGS) on the threshold voltage (VTH) and subthreshold swing (SS). The unique dependence of VTH and SS on gate geometry for different metals is observed, which is different from traditional field-effect transistors. A novel hybrid physics model, consisting of the traditional capacitance divider model and hole injection model, is proposed to explain this phenomenon, and the results exhibit an excellent agreement with the experimental data. The holes traverse the gate/p-GaN Schottky barrier by thermal emission or tunneling and inject into the p-GaN layer, generating the IGS. Expanding upon the traditional capacitance divider model, a portion of the injected holes accumulate at the p-GaN/AlGaN interface and induce the corresponding electrons at the AlGaN/GaN heterojunction, which promotes channel conduction. Hence, the transfer curves display the correlation between IGS and VTH as well as SS. The results show that high IGS can alleviate the instability of VTH caused by the lithographic overlay error, and simultaneously optimize SS. This work offers a novel perspective for examining the turn-on mechanism of p-GaN HEMTs, thereby contributing to device design.

The Effect of Gate Leakage on the Noise Figure of Algan/Gan Hemts

The Effect Of The Gate-Drain Distance On High Frequency And Noise Performance For Algan/Gan Hemt

Influence of Epitaxial Structure in the Noise Figure of AlGaN/GaN HEMTs

High Frequency Noise Model of AlGaN/GaN HEMTs

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Effect of Hole-Injection on Leakage Degradation in a &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$p$ &Lt;/tex-Math> &Lt;/inline-Formula>-gan Gate AlGaN/GaN Power Transistor

A new analytical high frequency noise parameter model for AlGaN/GaN HEMT

Gate Current Transport in Enhancement-Mode P-N Junction/AlGaN/GaN (PNJ) HEMT

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

A Comprehensive Model for Gate Current in E-Mode p-GaN HEMTs

Measurement of piezoresistance coefficient with different gate voltages of GaN HEMT micro-accelerometer

Performance Optimization of Lateral Algan/Gan Hemts with Cap Gate on 150-Mm Silicon Substrate

Influence of the Heterostructure Design on Noise Figure of AlGaN/GaN HEMTs

Effect of Device Geometry on Static and Dynamic Performance of AlGaN/GaN-on-Si High Electron Mobility Transistor

Effects of Gate Work Function on E-mode AlGaN/GaN HEMTs with Stack Gate Β-Ga2o3/p-gan Structure

An ASM-Based Semiempirical Model for AlGaN/GaN Power HEMTs with P-Gan Gate

Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile

Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications