Abstract:The reason that p-GaN gate normally-off high electron mobility transistor (HEMT) device is able to draw prevail interests is not only for its outstanding electric properties of low on-resistance and high thermal conductivity, but also for its applications under high frequency and high voltage. In HEMT devices, the setting of Al component in the AlGaN barrier layer is a key parameter to affect the formation of two-dimensional electron gas (2DEG) at the AlGaN/GaN heterojunction, and therefore directly determines the performance of the devices. This paper uses the Atlas module of the Silvaco-TCAD software to design and simulate p-GaN gate normally-off HEMT devices to investigate the effect of Al mole fraction content in the AlGaN barrier layer on the electrical performance, as well as the causes in terms of the conduction band energy structure diagram. The results show that the threshold voltage of the HEMT device decreases, the maximum saturation drain current increases, and the peak transductance of the HEMT device increases with increasing the Al content. In the off-state (zero gate voltage), the AlGaN/GaN potential well depth becomes deeper as the Al mole fraction increases, resulting in a lower driven force to rebuild the minimized 2DEG concentration in the GaN layer for switching from off-state to on-state, and this leads to a lower threshold voltage. While, in the on-state (5 V gate voltage), the deeper AlGaN/GaN potential well depth as the Al mole fraction increases, the higher of the 2DEG concentration of the GaN layer, leading to a higher maximum saturation output drain current. After optimization, the integrated electrical performance of the HEMT devices has been found best when the Al mole fraction content is about 0.25. The results obtained from the simulations are helpful for the experimental design of p-GaN gate normally-off HEMT devices

Influence of the Heterostructure Design on Noise Figure of AlGaN/GaN HEMTs

Influence of Epitaxial Structure in the Noise Figure of AlGaN/GaN HEMTs

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

The Effect Of The Gate-Drain Distance On High Frequency And Noise Performance For Algan/Gan Hemt

High Frequency Noise Model of AlGaN/GaN HEMTs

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications

Self-consistent numerical model and optimization of two-dimensional electron gases for AlGaN/GaN HEMT

Optimization of Two-Dimensional Electron Gases and I–V Characteristics for AlGaN/GaN HEMT Devices

Effect of gate structures on the DC and RF performance of AlGaN/GaN HEMTs

The Effect of Gate Leakage on the Noise Figure of Algan/Gan Hemts

Effect of Device Geometry on Static and Dynamic Performance of AlGaN/GaN-on-Si High Electron Mobility Transistor

Simulation study on electrical properties of p-GaN gate normally-off HEMT devices affected by Al mole fraction in AlGaN barrier layer

A NEW FIELD-PLATED GaN HEMT STRUCTURE WITH IMPROVED POWER AND NOISE PERFORMANCE

DC and RF Characteristics of AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs

The Sensing Mechanism of InAlN/GaN HEMT

Simulation investigation of double-heterostructure T-gate HEMT with graded back-barrier engineering for improved RF performance

Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications

Performance analysis of InAlN/GaN HEMT and optimization for high frequency applications