Performance analysis of InAlN/GaN HEMT and optimization for high frequency applications

Jagori Raychaudhuri,Jayjit Mukherjee,Amit Malik,Sudhir Kumar,D.S. Rawal,Meena Mishra,Santanu Ghosh

2023-09-06

Abstract:An InAlN/GaN HEMT device was studied using extensive temperature dependent DC IV measurements and CV measurements. Barrier traps in the InAlN layer were characterized using transient analysis. Forward gate current was modelled using analytical equations. RF performance of the device was also studied and device parameters were extracted following small signal equivalent circuit model. Extensive simulations in Silvaco TCAD were also carried out by varying stem height, gate length and incorporating back barrier to optimize the suitability of this device in Ku-band by reducing the detrimental Short Channel Effects (SCEs). In this paper a novel structure i.e., a short length T gate with recess, on thin GaN buffer to achieve high cut-off frequency (f$_T$) and high maximum oscillating frequency (f$_{max}$) apt for Ku-band applications is also proposed.

Applied Physics

What problem does this paper attempt to address?

### Problems the Paper Aims to Solve This paper aims to investigate the performance of InAlN/GaN high electron mobility transistors (HEMTs) in high-frequency applications and improve their high-frequency performance by optimizing structural parameters. Specifically, the paper focuses on the following aspects: 1. **High-Frequency Performance Analysis**: - Characterizing the barrier traps in the InAlN layer through the study of temperature-dependent direct current (DC) characteristics, capacitance-voltage (C-V) characteristics, and transient analysis. - Establishing a mathematical model of the gate current and conducting radio frequency (RF) performance analysis. 2. **Short Channel Effects (SCEs)**: - Investigating the impact of short channel effects on device performance and exploring how to suppress these effects by introducing a back barrier. 3. **Optimized Design**: - Using Silvaco TCAD simulation tools to optimize the device for Ku-band applications by altering stem height, gate length, and introducing a back barrier. - Proposing a new structure that employs a short T-shaped gate and recessed gate on a thin GaN buffer layer to achieve high cutoff frequency (fT) and maximum oscillation frequency (fmax). Through these studies, the paper aims to enhance the performance of InAlN/GaN HEMTs in high-frequency applications, particularly for high-frequency operations in the Ku-band.

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