Abstract:Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on β-gallium oxide (β-Ga 2 O 3 ) wafers with various back barrier (BB) materials have garnered considerable attention, mainly due to the superior sheet charge density achieved by the confinement of a large number of electrons in the quantum well, which improves RF performance even further. This work investigates the role of different BB materials of Fe-doped AlGaN buffer AlN/GaN HEMTs on β-Ga 2 O 3 wafers (substrate) with gate–source ( L GS ) and gate–drain ( L GD ) distances of 0.4 μm and 1.2 μm, respectively. When compared to traditional substrates such as silicon carbide and silicon, a β-Ga 2 O 3 substrate is more affordable, is accessible in large wafer sizes, and has a lower lattice mismatch (0.4–2.4%) with AlGaN alloys. The effects of gate length scaling (Lg = 50 nm, 100 nm, and 150 nm) on the proposed HEMT devices were also analysed. The short-channel effects can be mitigated by introducing BB structures, which helps avoid further scaling of the barrier layer. With a p-diamond BB of 100 nm thickness, an Fe-doped AlGaN buffer rectangular gated AlN/GaN HEMT Lg = 50 nm results in maximum I D of 5.23 A/mm, g m of 1723 mS/mm, and f T of 361.6 GHz. This superior DC/RF performance can be achieved due to the large confinement of charge carriers into the quantum well and the low leakage current achieved by introducing BB structures and Fe-doped AlGaN buffer. With this outstanding performance, the proposed HEMT device is a promising candidate for next-generation RF applications.

Efficacy of Π-Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

Performance Analysis of AlN/GaN HEMTs on β-Ga2O3 Through Exploration of Varied Back Barriers: An Investigative Study for Advanced RF Power Applications

A Π-shaped p-GaN HEMT for reliable enhancement mode operation

Investigation of RF performance of Ku-band GaN HEMT device and an in-depth analysis of short channel effects

Enhancement-mode GaN HEMT using a combination structure of recessed-gate and p-GaN gate structure

Improving Rf Characteristic and Suppress Gate Leakage in Normally-Off Gan-Hemts Using Negative Polarization Effect and Floating Gate for Millimeter-Wave Systems

RF Performance Augmentation Using DG-InAlN/GaN HEMT

Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

Small signal and noise analysis of T-gate HEMT with polarization doped buffer for LNAs

The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer

A Theoretical Study of Gating Effect on InP-InGaAs HEMTs by Tri-Layer T–shape Gate

Study of GaN/AlGaN Air Structure Gate HEMTs with High Linearity for RF Applications

Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier

On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

High-performance normally off p-GaN gate high-electron-mobility transistor with In 0.17 Al 0.83 N barrier layer design

Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure

Polarization induced doping and high-k passivation engineering on T-gate MOS-HEMT for improved RF/microwave performance

Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range

Performance analysis of InAlN/GaN HEMT and optimization for high frequency applications

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer