Abstract:Abstract Electron mobility is important for electron velocity, transport current, output power, and frequency characteristics. In conventional mobility extraction methods, electron mobility is usually extracted directly from the measured gate capacitance ( C G ) and current-voltage characteristics. When device gate length ( L G ) scales to sub-100 nm, the determination of C G becomes more difficult not only for the measure equipment but also the enhanced effect from parasitic capacitance. Here in this paper, the C G extracted from high-frequency small-signal equipment circuit is used for the InAlN/GaN high electron mobility transistors (HEMTs). Electron mobility of the device with L G of 60-nm under V DS of 0.1 V and 10 V is extracted using two-dimensional scattering theory, respectively. The obtained results show that under a high electric field, the electron temperature ( T e ) and addition polarization charges (∆σ) increase, resulting in the enhanced polar optical phonon (POP) as well as polarization Coulomb field (PCF) scatterings and degradation of the electron mobility. This study makes it possible to improve the electron mobility by reducing T e and ∆σ for the InAlN/GaN HEMTs application.AlGaN/GaN heterostructure field-effect transistors with different gate lengths were fabricated. Based on the chosen of the Hamiltonian of the system and the additional polarization charges, two methods to calculate PCF scattering by the scattering theory were presented. By comparing the measured and calculated source-drain resistances, the influence of the different gate lengths on the PCF scattering potential was confirmed.

The Power Law of Phonon-Limited Electron Mobility in the 2-D Electron Gas of AlGaN/GaN Heterostructure

Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect

Phonon-limited carrier mobilities and Hall factors in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> -SiC from first principles

Effective Mass of the Two-Dimensional Electron Gas and Band Nonparabolicity in AlxGa1−xN∕GaN Heterostructures

Gate-Voltage Independence of Electron Mobility in Power Algan/Gan Hemts

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Significant Phonon Drag Effect in Wide Bandgap GaN and AlN

Influnce of Al-content on the Property of the Two-Dimensional Electron Gases in AlxGa1-xN/GaN Heterostructures

Investigation into the Energy Band Diagram and Charge Distribution in AlGaN/GaN Double Heterostructures by Self-Consistent Poisson–Schrödinger Calculations

Effect of Electric Field On Electron Mobility in Sub-100 nm InAlN/GaN High Electron Mobility Transistors

Observation of the Transition from Diffusive Regime to Ballistic Regime of the 2DEG Transport Property in Al Ga1−N/GaN Heterostructures

Study Of Two-Dimensional Electron Gas In Aln/Gan Heterostructure By A Self-Consistent Method

Electron Mobility Exceeding 10(4) Cm(2)/Vs In An Algan-Gan Heterostructure Grown On A Sapphire Substrate

Mobility of Two-Dimensional Electron Gas in Gaas-Algaas Heterojunctions (Ii)

Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures

Magnetotransport Properties of High Equivalent Al Composition AlGaN/GaN Heterostructures Using AlN/GaN Superlattice As a Barrier

Low-temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped Pseudomorphic N-AlGaAs/GaInAs/GaAs Structures

A Modelling study of Electron transport in GaN/AlGaN superlattices using Monte Carlo simulation