Abstract:Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodetectors. The wide bandgap energy and the predicted high breakdown field, together with the availability of low-cost native substrates, make \b{eta}-Ga2O3 a promising material compared to other conventional wide bandgap materials, such as GaN and SiC. Alloying of Al with \b{eta}-Ga2O3 could enable even larger band gap materials, and provide more flexibility for electronic and optoelectronic device design. In this work, we demonstrate a high mobility two-dimensional electron gas (2DEG) formed at the \b{eta}-(AlxGa1-x)2O3/Ga2O3 interface through modulation doping. Shubnikov-de Haas oscillation was observed for the first time in the modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 structure, indicating a high-quality channel formed at the heterojunction interface. The formation of the 2DEG channel was further confirmed by a weak temperature-dependence of the carrier density, and the peak low temperature mobility was found to be 2790 cm2/Vs, which is significantly higher than can be achieved in bulk-doped \b{eta}-Ga2O3. The demonstrated modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 structure lays the foundation for future exploration of quantum physical phenomena as well as new semiconductor device technologies based on the \b{eta}-Ga2O3 material system.

Low-temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped Pseudomorphic N-AlGaAs/GaInAs/GaAs Structures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Multisubband Transport Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

High-temperature Transport Properties of 2DEG in AlGaN/GaN Heterostructures

Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers

Influence of DX Centers in the AlxGa1−xAs Barrier on the Low-Temperature Density and Mobility of the Two-Dimensional Electron Gas in GaAs/AlGaAs Modulation-Doped Heterostructure

Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures

Transport Properties of Two-Dimensional Electron Gas in Different Subbands in Triangular Quantum Wells at AlxGa1−xN/GaN Heterointerfaces

Subbands Transport of the Two-Dimensional Electron Gas in AlxGa1−xN/GaN Heterostructures

Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect

Weak Anti-Localization of the Two-Dimensional Electron Gas in Modulation-Doped AlxGa1−xN∕GaN Heterostructures with Two Subbands Occupation

Shubnikov-de Haas oscillations in 2D electron gas with anisotropic mobility

The weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas

Magnetotransport properties of two-dimensional electron gas in AlxGa(1-x)N/GaN heterostructures

Transport in two-dimensional modulation doped semiconductor structures

Ultraclean two-dimensional hole systems with mobilities exceeding

Carbon-doped high mobility two-dimensional hole gases on (110) faced GaAs

Transport properties of the two-dimensional electron gas in A/sub x/Ga/sub 1-x/N/GaN heterostructures

Temperature dependence of the low-field mobility of a very narrow miniband in the degenerate case

High Mobility 2DEG in modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 heterostructures