Temperature dependence of the low-field mobility of a very narrow miniband in the degenerate case

s j xu,jianfen liu,h z zheng,s j chua,y x li,w c cheng,p h zhang,xiao pei yang
DOI: https://doi.org/10.1016/0375-9601(96)00033-3
IF: 2.707
1996-01-01
Physics Letters A
Abstract:Perpendicular transport in a specially designed, doped and weakly coupled GaAs/AlAs superlattice is investigated. A linear current-voltage at a bias within +/-10 mV and a negative differential velocity effect at a bias of about +/-40 mV are observed at low temperatures. The miniband conductance near zero electric field is studied as a function of temperature. It is found that the measured conductance increases slightly as the temperature increases to about 30 K, decreases as the temperature rises from 30 K to 70 K, and then increases strongly above 70 K, indicating the existence of a mobility gap.
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