Transient hot-electron transport in GaAs with a Γ-L-X band structure

malin liu,d y xing,c s ting
DOI: https://doi.org/10.1088/0953-8984/1/2/009
1989-01-01
Abstract:The method of nonequilibrium statistical operators developed by Zubarev (1974) has been extended to study transient hot-electron transport in many-valley semiconductors. A set of coupled evolution equations with memory effect are derived to determine the time-dependent drift velocities upsilon alpha (t), hot-electron temperatures Talpha (t) and populations Nalpha (t) of various valleys under time-dependent electric fields. In the classical approximation these nonlinear differential equations are applied to study the transient transport of GaAs with a Gamma -L-X band structure under electric fields with several configurations: (i) time-step; (ii) rectangular time pulse; (iii) high-frequency sinusoid. Using the same set of parameters, the authors' calculated results for upsilon d(t)= Sigma alpha Nalpha (t) upsilon alpha (t)/ Sigma alpha Nalpha (t) compare quantitatively with those in Monte Carlo calculations.
What problem does this paper attempt to address?