Abstract:The transverse magnetoconductivity ${\ensuremath{\sigma}}_{\mathrm{xx}}$ of a two-dimensional electron gas (2D EG) in selectively doped ${\mathrm{Al}}_{0.3}$${\mathrm{Ga}}_{0.7}$As/ ${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{In}}_{\mathrm{x}}$As/GaAs pseudomorphic structures is shown to behave very differently from that of the ${\mathrm{Al}}_{0.3}$${\mathrm{Ga}}_{0.7}$As/GaAs structures in the quantum Hall regime. Well-defined peaks of transverse conductivity ${\ensuremath{\sigma}}_{\mathrm{xx}}$ corresponding to each Landau level were observed and their peak heights increased with the increase of InAs composition. Also, the peak height of ${\ensuremath{\sigma}}_{\mathrm{xx}}$ increases with the Landau number N in the pseudomorphic structure, especially for samples with x\ensuremath{\ge}0.13 ${\ensuremath{\sigma}}_{\mathrm{xx}}$ varies in proportional to N+(1/2, whereas it remains almost unchanged when N increased in the ${\mathrm{Al}}_{\mathrm{y}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{y}}$As/GaAs structures. The behavior of ${\ensuremath{\sigma}}_{\mathrm{xx}}$ for the pseudomorphic structure is very similar to that of the 2D EG formed in the inversion layer of the Si metal-oxide-semiconductor field-effect transistor. The observed difference between the pseudomorphic structure and the ${\mathrm{Al}}_{\mathrm{y}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{y}}$As/GaAs heterostructure is interpreted in terms of the change in the dominant scattering mechanism, i.e., the short-range cluster scattering in the former, and the long-range scattering in the latter.

Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices

Negative differential resistance and current self-oscillation in doped GaAs/AlAs superlattices

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Longitudinal Magnetotransport in Long-Period Semiconductor Superlattices

Current Self-Oscillation Induced by A Transverse Magnetic Field in A Doped Gaas/Alas Superlattice

Self-Sustained Oscillations Caused by Magnetic Field in A Weakly-Coupled Gaas/Alas Superlattice

Static and Dynamic Electric Field Domain Formation in a Doped GaAs/AlAs Superlattice

A theoretical resonant-tunnelling approach to electric-field effects in quasiperiodic Fibonacci GaAs-(Ga,Al)As semiconductor superlattices

High-field nonlinear perpendicular transport of electron in GaAs/Al0.3Ga0.7As short-period superlattice

Quantum magnetotransport oscillations of 2DEG in a short-period InAs lateral superlattice on a vicinal (001) surface in a GaAs/AlGaAs heterostructure

Zener Tunneling Between Wannier–Stark Levels in GaAs/AlGaAs Superlattices

Shifted Landau Ladders and Low Field Magneto-Oscillations in High-Mobility GaAs 2D Hole Systems

New Type of Fano Resonant Tunneling Via Anderson Impurities in Superlattice

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Magnetotransport Properties Of Fibonacci Semiconductor Superlattices

Observation of an Even–Odd Asymmetric Transport in High Landau Levels

Zener Tunneling Between Landau Orbits in a High-Mobility Two-Dimensional Electron Gas

Landau Level Crossing in a Spin-Orbit Coupled Two-Dimensional Electron Gas

Magnetotransport in Zener Tunneling Regime in a High-Mobility Two-Dimensional Hole Gas

Magnetoconductivity of a two-dimensional electron gas in Al0.3Ga0.7As/Ga1−xInxAs/GaAs pseudomorphic heterostructures in the quantum hall regime

Experimental Observation of Kondo-Fano Resonant Tunneling in Silicon-Doped GaAs/AlAs Multiple Quantum Wells