Gate-tunable negative differential conductance in hybrid semiconductor-superconductor devices
Mingli Liu,Dong Pan,Tian Le,Jiangbo He,Zhongmou Jia,Shang Zhu,Guang Yang,Zhaozheng Lyu,Guangtong Liu,Jie Shen,Jianhua Zhao,Li Lu,Fanming Qu
DOI: https://doi.org/10.1088/0256-307X/40/6/067301
2023-03-01
Abstract:Negative differential conductance (NDC) manifests as a significant characteristic of various underlying physics and transport processes in hybrid superconducting devices. In this work, we report the observation of gate-tunable NDC outside the superconducting energy gap on two types of hybrid semiconductor-superconductor devices, i.e., normal metal-superconducting nanowire-normal metal and normal metal-superconducting nanowire-superconductor devices. Specifically, we study the dependence of the NDCs on back-gate voltage and magnetic field. When the back-gate voltage decreases, these NDCs weaken and evolve into positive differential conductance dips; and meanwhile they move away from the superconducting gap towards high bias voltage, and disappear eventually. In addition, with the increase of magnetic field, the NDCs/dips follow the evolution of the superconducting gap, and disappear when the gap closes. We interpret these observations and reach a good agreement by combining the Blonder-Tinkham-Klapwijk (BTK) model and the critical supercurrent effect in the nanowire, which we call the BTK-supercurrent model. Our results provide an in-depth understanding of the tunneling transport in hybrid semiconductor-superconductor devices.
Mesoscale and Nanoscale Physics