Large Zero Bias Peaks and Dips in a Four-Terminal Thin InAs-Al Nanowire Device
Huading Song,Zitong Zhang,Dong Pan,Donghao Liu,Zhaoyu Wang,Zhan Cao,Lei Liu,Lianjun Wen,Dunyuan Liao,Ran Zhuo,Dong E. Liu,Runan Shang,Jianhua Zhao,Hao Zhang
DOI: https://doi.org/10.1103/physrevresearch.4.033235
2022-01-01
Physical Review Research
Abstract:We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using a four-terminal design. Compared to previous works, thinner InAs nanowire (diameter less than 40 nm) is expected to reach fewer sub-band regime. The four-terminal device design excludes electrode contact resistance, an unknown value which has inevitably affected previously reported device conductance. Using tunneling spectroscopy, we find large zero-bias peaks (ZBPs) in differential conductance on the order of 2e^2/h. Investigating the ZBP evolution by sweeping various gate voltages and magnetic field, we find a transition between a zero-bias peak and a zero-bias dip while the zero-bias conductance sticks close to 2e^2/h. We discuss a topologically trivial interpretation involving disorder, smooth potential variation and quasi-Majorana zero modes.