Abstract:We report systematic quantum Hall transport experiments on Fabry-Perot electron interferometers at ultralow temperatures. The GaAs/AlGaAs heterostructure devices consist of two constrictions defined by etch trenches in the two-dimensional electron layer, enclosing an approximately circular island. Front gates deposited in etch trenches allow one to change the constriction filling, relative to the bulk. A systematic variation of the front-gate voltage affects the constriction and the island electron density, while the bulk density remains unaffected. This results in quantized plateaus in longitudinal resistance, while the Hall resistance is dominated by the low-density, low-filling constriction. At lower fields, when the quantum Hall plateaus fail to develop, we observe bulk Shubnikov-de Haas oscillations in series corresponding to an integer filling of the magnetoelectric subbands in the constrictions. This shows that the whole interferometer region is still quantum coherent at these lower fields at 10 mK. Analyzing the data within a Fock-Darwin model, we obtain the constriction electron density as a function of the front-gate bias and, extrapolating to the zero field, the number of electric subbands (conductance channels) resulting from the electron confinement in the constrictions.

Zener Tunneling Between Wannier–Stark Levels in GaAs/AlGaAs Superlattices

Low-Field Quantum Hall Transport in an Electron Fabry-Perot Interferometer: Dependence of Constriction Filling on Front-Gate Voltage

Low-field Quantum Hall Transport in an Electron Fabry-Perot Interferometer

High-field transport in semiconductor superlattices for interacting Wannier-Stark levels

Strong terahertz emission from superlattices via Zener tunneling

Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices

New Formation Mechanism of Electric Field Domain Due to Γ-X Sequential Tunneling in GaAs/AlAs Superlattices

New Type of Fano Resonant Tunneling Via Anderson Impurities in Superlattice

A theoretical resonant-tunnelling approach to electric-field effects in quasiperiodic Fibonacci GaAs-(Ga,Al)As semiconductor superlattices

New Formation Mechanism Of Electric-Field Domain Due To Gamma-X Sequential Tunneling In Gaas/Alas Superlattices

An Investigation Of The Formation Mechanisms Of Electric Field Domains In Gaas/Alas Superlattices

Synchronization and Chaos Induced by Resonant Tunneling in GaAs/AlAs Superlattices.

Self-Sustained Oscillations Caused by Magnetic Field in A Weakly-Coupled Gaas/Alas Superlattice

Miniband Transport In Semiconductor Superlattices In A Quantized Magnetic-Field

Observation of Bistability in GaAs/AlAs Superlattices

Tunneling in Quantum-Wire Superlattices with Random Layer Thicknesses

Experimental Observation of Spontaneous Chaotic Current Oscillations in GaAs/Al0.45Ga0.55As Superlattices at Room Temperature

Current Self-Oscillation Induced by A Transverse Magnetic Field in A Doped Gaas/Alas Superlattice

Electronic States of V-shaped Semiconductor Quantum Wires in Electric Fields

Negative differential resistance and current self-oscillation in doped GaAs/AlAs superlattices

Zener Tunneling Between Landau Orbits in a High-Mobility Two-Dimensional Electron Gas