Tunneling in Quantum-Wire Superlattices with Random Layer Thicknesses

Xiaoshuang Chen,Shi‐Jie Xiong,Guanghou Wang

DOI: https://doi.org/10.1103/physrevb.49.14736

1994-01-01

Abstract:The electron tunneling of a GaAs/${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Al}}_{\mathit{x}}$As superlattice with randomly distributed layer thicknesses is studied within the framework of the effective-mass approximation in the Wannier representation. The transfer-matrix method and Landauer formula are used to calculate the electron transmission coefficient and tunneling conductance, respectively. Analytical and numerical calculations are performed for the tunneling conductance with different values of potential barrier (different x for ${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Al}}_{\mathit{x}}$As) and layer thicknesses. The present calculations show that the peak positions of the tunneling conductance are shifted to lower energy as x decreases. The number of peaks can be increased by increasing the layer thicknesses. Therefore, optical and electronic semiconductor devices may be artificially prepared by the proper choice of these parameters for quantum-wire superlattices with random layer thicknesses.