Lo-Phonon-Assisted Tunneling In Asymmetric Double-Well Structures With Thick Barriers

T. Wang,X. Mei,C. Jiang,Y. Huang,J. Zhou,X. Huang,C. Cai,Z. Yu,C. Luo,J. Xu,Z. Xu
DOI: https://doi.org/10.1103/PhysRevB.46.16160
IF: 3.7
1992-01-01
Physical Review B
Abstract:Nonresonant electron tunneling between asymmetric double quantum wells in AlxGa1-xAs/GaAs systems has been investigated by using steady-state and time-resolved photoluminescence spectra. Experimental evidence of LO-phonon-assisted tunneling through thick barriers has been obtained by enhancing excitation power densities or applying electric fields perpendicular to the well plane. LO-phonon-assisted tunneling times have also been estimated from the variation of the decay time of the narrow-well photoluminescence with applied electric fields. Our findings suggest that LO phonons in the barriers play an important role in the tunneling transfer.
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