Abstract:By solving the Schrdinger and Poisson equations self-consistently, the central barrier height, central barrier width, well width, and doping concentration in the barriers of symmetric Al_ 0.75 Ga_ 0.25 N/GaN double quantum wells (DQWs) have been studied to investigate their influences on the wavelength and absorption coefficient of intersubband transitions (ISBTs). A smaller wavelength of the ISBT between the first odd and the second even order subbands (S_ 1odd -S_ 2even ISBT) in Al_ 0.75 Ga_ 0.25 N/GaN DQWs and a larger absorption coefficient of the S_ 1odd -S_ 2even ISBT were obtained with decreased central barrier height, when the central barrier height was larger than 0.62 eV. The wavelength of the S_ 1odd -S_ 2even ISBT decreases, and the absorption coefficient of the S_ 1odd -S_ 2even ISBT increases, when the width of the central barrier is reduced. On the other hand, decreasing the width of the well will result in smaller wavelength of the S_ 1odd -S_ 2even ISBT and larger absorption coefficient of the S_ 1odd -S_ 2even ISBT when the width of the well is narrower than 1.9 nm. When doping concentration in the barriers is smaller than 10~ 18 /cm~3, the wavelength of the S_ 1odd -S_ 2even ISBT is unchanged, while the absorption coefficient of the S_ 1odd -S_ 2even ISBT increases with the doping concentration. These results provide useful guidance for realization of ultrafast two-color optoelectronic devices operating in the optical communication wavelength range.

INVESTIGATION ON RESONANT TUNNELING IN GaAs/Al X Ga 1-X As DBD USING TUNNELING SPECTROSCOPY

Lo-Phonon-Assisted Tunneling In Asymmetric Double-Well Structures With Thick Barriers

Resonant Tunneling of Holes in GaMnAs-Related Double-Barrier Structures

Direct Observation of Above-Quantum-step Quasibound States Ingaas/alx

Design of AlInAs/InP Tunnel Junction and Its Application in Devices

The Material Structure Research of the GaAs-based Resonant Tunneling Diode

Probing Semiconductor Band Structures and Heterojunction Interface Properties with Ballistic Carrier Emission: Gaas/Alxga1-Xas As A Model System

Resonant Tunnelling Via Inas Self-Organized Quantum Dot States

Intersubband Transitions In Asymmetric Alxga1-Xn/Gan Double Quantum Wells

Double-Resonance Enhanced Intersubband Second-Order Nonlinear Optical Susceptibilities in Gan/Algan Step Quantum Wells

Experimental Observation of Kondo-Fano Resonant Tunneling in Silicon-Doped GaAs/AlAs Multiple Quantum Wells

Piezomodulated-reflectivity study of GaAs/Al0.29Ga0.71As single quantum well

Behavior of exciton in direct−indirect band gap Al x Ga 1−x As crystal lattice quantum wells

Carrier Tunneling Effects on the Temperature Dependent Photoluminescence of Inas/Gaas Quantum Dot: Simulation and Experiment

Resonant Tunneling Effect in Metal-Semiconductor-Metal Ultraviolet Detectors Grown with Algan/Gan Multi-Quantum-Well Interlayer

Influence of Width of Left Well on Intersubband Transitions in AlxGa1−x N/GaN Double Quantum Wells

Tuning the Quasi-bound States of Double-barrier Structures: Insights from Resonant Tunneling Spectra

The Photocurrent of Resonant Tunneling Diode Controlled by the Charging Effects of Quantum Dots

Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection: An experimental study

Influence of structure and doping concentration of AlxGa1-xN/GaN double quantum wells on wavelength and absorption coefficient of intersubband transitions

Study Of Optical Properties In Gaas1-Xsbx/Gaas Single Quantum Wells