Abstract:The recent research focus on wide-bandgap and two-dimensional materials with a Schottky junction has provided a new concept for ultraviolet photodetectors. However, the working mechanism of the Schottky junction-based detector varies depending on the photosensitive materials used and the device structure. We demonstrated a TiO2/AlGaN/GaN heterostructure-based photodetector with a Schottky junction, integrating a ultraviolet photosensitive TiO2 nanolayer, a two-dimensional electron gas (2DEG) field effect transistor, and a metal–semiconductor Schottky diode. The spectral response wavelength region of the detector is 200-365 nm and peak responsivity is 37.396 A/W at −5 V bias under 240 nm UV illumination, respectively. Meanwhile, a peak photo-to-dark current ratio (PDCR) of 5.1 × 102 at −2 V bias voltage was observed under 274 nm UV irradiation. This Schottky-based 2DEG heterostructure detector can realize three dominant working principles: (i) the Schottky emission mechanism at a low reverse voltage (0-−1 V) before the current is fully turned on, (ii) the Poole-Frenkel emission mechanism at a medium reverse voltage (−1‒−2 V) with peak PDCR, and (iii) the Fowler-Nordheim tunneling mechanism at a high reverse voltage (>−2 V) with a high responsivity. Continuous cycle response measurement results indicate that the detectors have good response repeatability and reliability. The characteristics of response wavelength, responsivity, and stability showed that the detector can be used for several commercial applications, including sunscreen UV monitoring and LED sterilization light source detection.

Resonant Tunneling Effect in Metal-Semiconductor-Metal Ultraviolet Detectors Grown with Algan/Gan Multi-Quantum-Well Interlayer

Current Discontinuity Character of MSM UV Detector Grown with AlGaN/GaN Multi-quantum Well

Properties of Schottky Contact in MSM UV Detectors Based on AlGaN/GaN Heterostructure

Mid-Infrared Photoconductive Response in Algan/Gan Step Quantum Wells

Direct Observation of Above-Quantum-step Quasibound States Ingaas/alx

Influence of Algan/Gan Interface Polarization Fields on the Properties of Photoconductive Detectors

Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection.

Room Temperature Resonant Tunneling and Negative Differential Resistance Effects in a Self-Assembed Si Quantum Dot Array

Experimental Observation of Kondo-Fano Resonant Tunneling in Silicon-Doped GaAs/AlAs Multiple Quantum Wells

Polarization Assisted Interdigital AlGaN/GaN Heterostructure Ultraviolet Photodetectors

Nanoscale Visualization of Electronic Properties of AlxGa1-xN/AlyGa1-yN Multiple Quantum-Well Heterostructure by Spreading Resistance Microscopy

Tunneling induced electron transfer in SiNx/AlGaN/GaN based metal–insulator–semiconductor structures

Resonant Tunneling of Holes in GaMnAs-Related Double-Barrier Structures

Reflective Metal/Semiconductor Tunnel Junctions for Hole Injection in AlGaN UV LEDs

Numerical Investigation of GaN HEMT Terahertz Detection Model Considering Multiple Scattering Mechanisms

Electrical Characteristics and Photodetect Mechanism of TiO2/AlGaN/GaN Heterostructure-Based Ultraviolet Detectors with Schottky Junction

Influence of Polarization-Induced Electric Fields on Coherent Electron Tunneling in AlN/GaN Coupled Double Quantum Wells

Fowler-Nordheim tunneling mechanism for performance improvement in graphene 2D/GaN 3D heterojunction ultraviolet photodetector

Valence Subband Coupling Effect on Polarization of Spontaneous Emissions from Al-rich AlGaN/AlN Quantum Wells

Tunneling Resonances and Andreev Reflection Through an Interaction Quantum Dot Coupled with Two Half Metals and A Superconductor

Effect of Asymmetric Schottky Barrier on GaN-based Metal-Semiconductor-metal Ultraviolet Detector