Abstract:Resonant tunneling diodes (RTDs) are candidates for high power terahertz oscillators, and form the basis for understanding the quantum confinement and vertical transport in quantum structures such as quantum cascade lasers and quantum cascade detectors. In this work, repeatable negative differential resistance (NDR) is achieved in AIN/GaN RTDs grown on sapphire substrate by plasma-assisted molecular-beam epitaxy. Two reproducible NDR regions sequentially following two preresonance replicas are demonstrated at room temperature. A current region exhibiting negative correlation with temperature and oscillation-like features is first identified under reverse bias, which is interpreted as a combined contribution of weak resonant tunneling channels through different bound states in the well, The revealed peak-to-valley current ratio ranges from 1.1 to 1.8, and peak current density ranges from 5 to 164 kA cm(-2). Using an analytic model, resonant tunneling transports in both bias directions are quantitatively characterized and show good agreements with experiment results, demonstrating the capability of accurate quantum transport control using III-nitride grown on sapphire substrate. The findings will promote the implementation of low cost III-nitride monolithic microwave circuits and resonant tunneling structures based on sapphire, SiC, and even silicon substrates.

Room Temperature Resonant Tunneling and Negative Differential Resistance Effects in a Self-Assembed Si Quantum Dot Array

Coulomb blockade induced negative differential resistance effect in a self-assembly Si quantum dots array at room temperature

Room-Temperature Multi-Peak Ndr in Nc-Si Quantum-Dot Stacking Mos Structures for Multiple Value Memory and Logic

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Collective Behavior of Single Electron Effects in a Single Layer Si Quantum Dot Array at Room Temperature

Multipeak negative differential resistance effects in nanocrystalline Si stacking MOS structures

Repeatable Room Temperature Negative Differential Resistance in AlN/GaN Resonant Tunneling Diodes Grown on Sapphire

Dynamics of Tunneling into Charge-Tunable Si Quantum Dots

Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure

Can Single Electron Effects Be Directly Observed in Si Quantum Dots Array at Room Temperature?

Probing the Quantum Behavior of a Nanomechanical Resonator Coupled to a Double Quantum Dot

Effects of Quantized Energy Levels of QDs Confined in Asymmetric Barriers Within Silicon Nanowire Transistor

CHARGING DYNAMICS OF Si-QUANTUM DOTS IN TUNNEL CAPACITOR

Coupling Induced Subband Structures And Collective Single Electron Behavior In A Single Layer Si Quantum Dot Array

Numerical Simulation of Negative Differential Resistance Characteristics in Si/Si1- χGeχRTD at Room Temperature

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO 2 Barriers

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO2

Enhanced negative differential resistance in silicene double-barrier resonant tunneling diodes

Optically Modulated Bistability in Quantum Dot Resonant Tunneling Diodes

The Effect of Surface Conductance on Lateral Gated Quantum Devices in Si/Sige Heterostructures

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO<sub>2</sub>