Abstract:In this paper, we report direct experimental evidence of collective single electron effects in a single layer Si quantum dot sSi-QDd array at room temperature. The unique peak structure, observed in both the I-V and the capacitance-voltage sC-Vd characteristics, differs remarkably from the peaks and the staircase structures reported for the case of an individual quantum dot and reveals the collective Coulomb blockade and the quantum confinement effects in the weakly coupled Si-QD array. Simple theoretical estimations have been made to interpret the origin of the unique peak structure. Moreover, the number of charged electrons for each peak calculated from the underlying area of the peaks both in the I-V safter subtracting the background currentd and the C-V characteristics is found to be consistent with the number of coupled quantum dots under the electrode. This good agreement supports the assumption that each peak in the characteristics corresponds to a collective charging process of single electron into a subband in the Si-QD array arising from the weakly interdot coupling. This collective single electron effect in Si-QD array is important for its future application in the nanoelectronic devices.

Can Single Electron Effects Be Directly Observed in Si Quantum Dots Array at Room Temperature?

Collective Behavior of Single Electron Effects in a Single Layer Si Quantum Dot Array at Room Temperature

Coulomb blockade induced negative differential resistance effect in a self-assembly Si quantum dots array at room temperature

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Observation of Coulomb Blockade Effect in Silicon Nanocrystallites at Room Temperature

Coulomb Effects in the Ge/Si Single Quantum Dot

Charging and Coulomb Blockade Effects in Nanocrystalline Si Dots Embedded in SiO/sub 2/ Matrix

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO<sub>2</sub>

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO 2 Barriers

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO2

Room Temperature Resonant Tunneling and Negative Differential Resistance Effects in a Self-Assembed Si Quantum Dot Array

Coupling Induced Subband Structures And Collective Single Electron Behavior In A Single Layer Si Quantum Dot Array

Gate-controlled charge transfer in Si:P double quantum dots

Electrical characteristics of SiO2/crystalline Si quantum dots/SiO2 double-barrier diode

Observation of Quantum Fluctuations of Charge on a Quantum Dot

Coulomb Blockade Oscillations in Silicon Single-electron Transistor with a Strong Gate-dot Coupling

Room Temperature Electron Tunneling and Storage in a Nanocrystalline Silicon Floating Gate Structure

Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors

Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots

Single-electron Quantum Dot in Si/SiGe with Integrated Charge-Sensing