Abstract:This study focuses on the growth of silicon quantum dots (Si QDs) on insulator substrates via solid-state dewetting of ultrathin silicon films deposited by molecular beam epitaxy (MBE). The resulting Si QDs exhibit well-defined spherical shapes, low size dispersion with an average diameter of 6 nm, and a high density (10 12 /cm 2 ), making them ideal for microelectronic applications. Current-voltage spectroscopy and impedance spectroscopy were employed to investigate the electrical transport and dielectric properties of Si QDs integrated into a metal-insulator-semiconductor (MIS) structure (AuPd/SiO 2 : Si QDs/n-Si). Current-voltage measurements reveal that the insertion of Si QDs into the MIS structure improves the electrical transport by introducing new conduction mechanisms. Impedance measurements demonstrate the influence of Si QDs on the frequency dependence of the real part of the dielectric constant (ε') and the loss tangent (tan δ ). Furthermore, Si QDs impact both the real (M') and imaginary (M'') parts of the electric modulus. Despite slight deviations in dielectric properties, the MIS structure retains its fundamental nature. These investigations affirm the high electrical quality of Si QDs grown via solid-state dewetting and offer valuable insights for researchers engaged in the development of Si QD-based devices, such as non-volatile memories and MIS photodetectors.

Electrical characteristics of SiO2/crystalline Si quantum dots/SiO2 double-barrier diode

Electrical Characteristics of SiO2/crystalline Si Quantum Dots/sio2 Double-Barrier Diode

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Electron Tunneling in Nc-Si/A-Sio2 Double-Barrier Diode

Capacitance–voltage Study of SiO2/nanocrystalline Silicon/sio2 Double-Barrier Structures

Observation of Coulomb Blockade Effect in Silicon Nanocrystallites at Room Temperature

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO2

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO<sub>2</sub>

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO 2 Barriers

Can Single Electron Effects Be Directly Observed in Si Quantum Dots Array at Room Temperature?

The Structures and Properties of Si/SiO2 Core/shell Quantum Dots Studied by Density-Functional Tight-Binding Calculations

Electron and hole charging effect of nanocrystalline silicon in double-oxide barrier structure

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Heterojunction Diodes Formed Using Thin-Film-C Containing Polycrystalline Diamond and Si

Structural and Electroluminescent Properties of Si Quantum Dots/sic Multilayers

Transport and dielectric properties of MIS structure with embedded Si QDs (AuPd/SiO 2 :Si QDs/n-Si) grown by MBE

Enhanced Photovoltaic Property by Forming P-I-n Structures Containing Si Quantum Dots/sic Multilayers.

Transport and electrical properties of Si and Ge quantum dots embedded in oxide layers of MOS structures for optoelectronic applications

Transport Mechanism of Nanocrystalline-Silicon Film Tunnelling Diodes

Native surface oxidation yields SiC-SiO2 core-shell quantum dots with improved quantum efficiency