Abstract:Due to its intriguingly electrical, thermal and optical characteristics, single-crystal silicon carbide (SiC), one of the most significant wide-bandgap semiconductors, has been receiving intense attention. Up to date, SiC has been investigated for applications in high-power and high-frequency electronics, ultraviolet optoelectronics and quantum computing, which all critically have a strict requirement on the doping of SiC. To improve the quality and reliability of SiC devices, the amounts of both intentionally and unintentionally doped impurities as well as the doping-dependent characteristics like resistivity must be characterized with accuracy and convenience. This article reviews these characterization methods, including elemental analysis, electrical and optical methods. Among those, the term “elemental analysis” dominantly introduces the secondary ion mass spectroscopy technique (SIMS). Meanwhile, for the electrical methods, we will discuss the mature techniques used in laboratory including the Hall effect method, the electrical scanning probe techniques, etc. Moreover, the optical methods introduce the optical absorption method, Raman spectra analysis and photoluminescence spectroscopy. Additionally, a focus is placed specifically on the characterization of the carrier concentration distribution in SiC wafer, which meets the practical requirement for in situ diagnostics of SiC wafers.

Electrical Characteristics of SiO2/crystalline Si Quantum Dots/sio2 Double-Barrier Diode

Electrical characteristics of SiO2/crystalline Si quantum dots/SiO2 double-barrier diode

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Electron Tunneling in Nc-Si/A-Sio2 Double-Barrier Diode

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Capacitance–voltage Study of SiO2/nanocrystalline Silicon/sio2 Double-Barrier Structures

Observation of Coulomb Blockade Effect in Silicon Nanocrystallites at Room Temperature

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO2

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO<sub>2</sub>

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO 2 Barriers

Can Single Electron Effects Be Directly Observed in Si Quantum Dots Array at Room Temperature?

Electron and hole charging effect of nanocrystalline silicon in double-oxide barrier structure

Enhanced Photovoltaic Property by Forming P-I-n Structures Containing Si Quantum Dots/sic Multilayers.

Characterizations on the Doping of Single-Crystal Silicon Carbide

Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells

The Structures and Properties of Si/SiO2 Core/shell Quantum Dots Studied by Density-Functional Tight-Binding Calculations

Native surface oxidation yields SiC-SiO2 core-shell quantum dots with improved quantum efficiency

Transport and electrical properties of Si and Ge quantum dots embedded in oxide layers of MOS structures for optoelectronic applications

Improved Photovoltaic Properties of Si Quantum Dots/Sic Multilayers-Based Heterojunction Solar Cells by Reducing Tunneling Barrier Thickness

Characterization of a nanocrystal metal-oxide-semiconductor field effect transistor(MOSFET)

Structural and Electroluminescent Properties of Si Quantum Dots/sic Multilayers