Abstract:Semiconductor quantum dots (QDs) have unique discrete energy levels determined by the particle size and material. Therefore, they have potential applications as novel optical and electronic devices. Among those, colloidal group II-VI semiconductor quantum dots stand out for their facile synthesis and band gaps aligned with the visible light spectrum. However, the electrical characterization studies of an individual quantum dot necessitate the size of nanogap electrodes being equal to the size of the quantum dot, which has conventionally been evaluated using techniques such as scanning tunneling microscopy (STM) and nanogaps fabricated by electromigration. The complexity of device fabrication has restricted research in this area. Here, we present a pioneering approach for the electrical characterization of single-QD: heteroepitaxial-spherical (HS) Au/Pt nanogap electrodes. We fabricated transistors through chemisorption, an anchoring colloidal CdS QD (3.8 nm) between the HS-Au/Pt nanogap electrodes (gap separation: 4.5 nm). The resulting device functions as a quantum-dot single-electron transistor (QD-SET), showing resonant tunneling-an inherent characteristic of the QD. A steep current increase was observed at a negative voltage, apart from the theoretical single-electron tunneling current by Coulomb blockade phenomena, which agreed with the theoretical resonant tunneling current through a discrete energy level of the QD. This underscores the promise of HS-Au/Pt nanogap electrodes in realizing single-QD devices, offering a pathway toward unlocking their full potential.

Characterization of a nanocrystal metal-oxide-semiconductor field effect transistor(MOSFET)

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Fabrication and Characterization of Silicon Quantum Dots in Si-rich Silicon Carbide Films.

Optical studies of ZnO quantum dots grown on Si(001)

Optical studies of ZnO quantum dots grown on Si(0 0 1)

Resonant tunneling in a colloidal CdS semiconductor quantum-dot single-electron transistor based on heteroepitaxial-spherical Au/Pt nanogap electrodes

The theoretical DFT study of electronic structure of thin Si/SiO2 quantum nanodots and nanowires

Quantum Dot With a Diamond-Shaped Channel MOSFET on a Bulk Si Substrate

Fabrication and Characterization of a Single Electron Transistor Based on a Silicon-on-Insulator

Fabrication And Characterization Of An Undoped Gaas/Algaas Quantum Dot Device

Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure

Transport and electrical properties of Si and Ge quantum dots embedded in oxide layers of MOS structures for optoelectronic applications

Electron localization and resonant tunneling in uniform nanocrystalline silicon quantum dot systems

Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe

Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor

Electrical Characteristics of SiO2/crystalline Si Quantum Dots/sio2 Double-Barrier Diode

Thickness‐Dependent Electronic Transport in Ultrathin, Single Crystalline Silicon Nanomembranes

Intrinsic and doped coupled quantum dots created by local modulation of implantation in a silicon nanowire