Abstract:Shallow impurity doping is an efficient route to tailor optical and electronic features of semiconductor quantum dots (QDs). However, the effect of doping is often smeared by the size, shape, and composition inhomogeneities. In this paper, we study optical properties of almost monodispersed spherical silicon (Si) QDs that are heavily doped with boron (B) and phosphorus (P). The narrow size distribution achieved by a size-separation process enables us to extract doping-induced phenomena clearly. The degree of doping-induced shrinkage of the optical band gap is obtained in a wide size range. Comparison of the optical band gap with theoretical calculations allow us to estimate the number of active donor-acceptor pairs in a QD. Furthermore, we found that the size and detection energy dependence of the luminescence decay rate is significantly modified below a critical diameter, that is ∼5.5 nm. In the diameter range above 5.5 nm, the luminescence decay rate is distributed in a wide range depending on the detection energy even in size-purified Si QDs. The distribution may arise from that of donor-acceptor distances. On the other hand, in the diameter range below 5.5 nm the detection energy dependence of the decay rate almost disappears. In this size range, which is smaller than twice of the effective Bohr radius of B and P in bulk Si crystal, the donor-acceptor distance is not a crucial factor to determine the recombination rate.

Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Charge Transfer of Single Laser Crystallized Intrinsic and Phosphorus-Doped Si-nanocrystals Visualized by Kelvin Probe Force Microscopy

Doping Si Nanocrystals Embedded in Sio2 with P in the Framework of Density Functional Theory

Electron Spin Resonance in P-doped Si Nanocrystals/sic Stacked Structures with Various Dot Sizes

Doped Silicon Nanocrystals From Organic Dopant Precursor By A Sicl4-Based High Frequency Nonthermal Plasma

Bias spectroscopy and simultaneous SET charge state detection of Si:P double dots

Time-resolved and temperature-dependent photoluminescence study on phosphorus doped Si quantum dots/SiO 2 multilayers with ultra-small dot sizes

Characterizations on the Doping of Single-Crystal Silicon Carbide

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Si doping effect on self-organized InAs/GaAs quantum dots

Doping silicon nanocrystals with boron and phosphorus

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Doped Silicon Nanoparticles Synthesized by Nonthermal Plasma

Atomic-scale study on the dopant distribution in phosphorus and boron-doped Si nanocrystals/SiO2 multilayers

Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors

Characterization of a nanocrystal metal-oxide-semiconductor field effect transistor(MOSFET)

Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure

Donor-Acceptor Pair Recombination in Size-Purified Silicon Quantum Dots

Phosphorus doping of ultra-small silicon nanocrystals