Abstract:We investigated the growth and evolution of Si-based Ge quantum dots (Ge/Si QDs) under low Ge deposition (1.2-4.4 nm thick) using magnetron sputtering. The morphology and structure of QDs were analyzed with the help of an atomic force microscope (AFM), scanning electron microscope, transmission electron microscope, Raman, surface energy theory and dynamics theory, the photoelectric properties of QDs were characterized by photoluminescence (PL) spectra. The results showed that the growth mechanism of QDs conformed to Stranski-Krastanow mode, but the typical thickness of the wetting layer was nearly three times higher than those derived from conventional technologies such as molecular beam epitaxy, chemical vapor deposition, solid phase epitaxy and so on. Meanwhile, the shape evolution of QDs was very different from existing reports. The specific internal causes of these novel phenomena were analyzed and confirmed and reported in this paper. In addition, the AFM, Raman, and PL tests all indicated that the QDs grown when 3.4 nm Ge was deposited have the most excellent morphology, structure, and optoelectronic performance. Our work lays a foundation for further exploration of the controllable growth of QDs at high deposition rates, which is a new way to realize the industrialization of QDs used for future devices.

CAFM Studies on Individual GeSi Quantum Dots and Quantum Rings

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Conductive Atomic Force Microscopy Studies on the Transformation of Gesi Quantum Dots to Quantum Rings

Nanoscale Electrical Property Studies of Individual GeSi Quantum Rings by Conductive Scanning Probe Microscopy.

Electrical Properties of Individual Self-Assembled Gesi Quantum Rings

Composition and Conductance Distributions of Single GeSi Quantum Rings Studied by Conductive Atomic Force Microscopy Combined with Selective Chemical Etching

Studying the Lateral Composition in Ge Quantum Dots on Si(001) by Conductive Atomic Force Microscopy

Optical properties of Ge/Si quantum dot superlattices

Effects of a Native Oxide Layer on the Conductive Atomic Force Microscopy Measurements of Self-Assembled Ge Quantum Dots

Nanoscale Quantification of Charge Injection and Transportation Process in Si-nanocrystal Based Sandwiched Structure.

Study of Si Caplayer Influence on Microstructure of Ge/Si Quantum Dots by Grazing Incident X-Ray Diffraction

Charging Effect in Silicon Nanocrystals Observed by Electrostatic and Kelvin-probe Force Microscopy

Increased Conductance of Individual Self-Assembled GeSi Quantum Dots by Inter-Dot Coupling Studied by Conductive Atomic Force Microscopy

Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique

Physical Mechanism of Quantum Dot to Quantum Ring Transformation Upon Capping Process

Characterization of a nanocrystal metal-oxide-semiconductor field effect transistor(MOSFET)

Needle in a haystack: efficiently finding atomically defined quantum dots for electrostatic force microscopy

Transport and electrical properties of Si and Ge quantum dots embedded in oxide layers of MOS structures for optoelectronic applications

Investigating the Composition and Conductance Distributions on Highly GeSi Mixed Quantum Dots and Inside Oxidation Problem

Microscopic Observation of Lateral and Vertical Charge Transportation in Si Nanocrystals Sandwiched by Amorphous SiC Layers

Transient Hole Trapping in Individual Gesi Quantum Dot Grown on Si(001) Studied by Conductive Atomic Force Microscopy