Abstract:Monocrystalline Germanium quantum dots (Ge QDs), grown by molecular beam epitaxy (MBE), are intricately embedded within a SiO 2 oxide layer of a metal-insulator-semiconductor (MIS) structure, catering to optoelectronic applications. These monocrystalline Ge QDs exhibit high density (D ∼ 5 x 10 12 cm -2 ), possess a spherical morphology, and an average size of 6 nm with narrow size distribution. A comprehensive investigation into the influence of these quantum dots on the electrical transport and dielectric properties of the metal-insulator-semiconductor (MIS) structure was conducted through current-voltage (I-V) spectroscopy and impedance spectroscopy. Notably, I-V measurements demonstrate that Ge QDs enhance conduction phenomena, thereby improving electrical transport within the MIS structure. Furthermore, the capacitance-voltage (C-V) and conductance-voltage (G-V) measurements, spanning the inversion and accumulation regions, demonstrate a memory effect induced by Ge QDs within the MOS structure. Extensive analysis of dielectric parameters, including permittivity (ε'), dielectric loss (ε"), dissipation factor (tan δ ), as well as electrical modulus (M' and M"), across a broad frequency range and under varying bias voltages, reveals no anomalous electrical or dielectric behavior attributable to the presence of Ge QDs in MIS structure. Consequently, these findings affirm the viability of the novel MIS structures with Ge QDs for the development of optoelectronic devices such as photodetectors or solar cells.

Nanoscale Electrical Property Studies of Individual GeSi Quantum Rings by Conductive Scanning Probe Microscopy.

Electrical Properties of Individual Self-Assembled Gesi Quantum Rings

CAFM Studies on Individual GeSi Quantum Dots and Quantum Rings

Conductive Atomic Force Microscopy Studies on the Transformation of Gesi Quantum Dots to Quantum Rings

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Composition and Conductance Distributions of Single GeSi Quantum Rings Studied by Conductive Atomic Force Microscopy Combined with Selective Chemical Etching

Growth Mechanism Of Gesi Quantum Rings On Si(001)

Optical properties of Ge/Si quantum dot superlattices

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Self-Assembled Sige Quantum Rings Grown on Si(001) by Molecular Beam Epitaxy

Scanning Probe Electronic Imaging of Lithographically Patterned Quantum Rings

Transient Hole Trapping in Individual Gesi Quantum Dot Grown on Si(001) Studied by Conductive Atomic Force Microscopy

Nanometer-scale dielectric constant of Ge quantum dots using apertureless near-field scanning optical microscopy

Nanoscale Quantification of Charge Injection and Transportation Process in Si-nanocrystal Based Sandwiched Structure.

Microscopic study of electrical properties of CrSi2 nanocrystals in silicon

Growth and Shape Preservation of Self-Assembled SiGe Quantum Rings

Kinetic calculation analysis of Ga deposition on the morphology evolution of GaAs quantum ring

Microscopic Observation of Lateral and Vertical Charge Transportation in Si Nanocrystals Sandwiched by Amorphous SiC Layers

Electronic states and phonon properties of Ge x Si 1−x nanostructures

Bias-dependent Conductive Characteristics of Individual GeSi Quantum Dots Studied by Conductive Atomic Force Microscopy

Electrical and dielectric characterization of Ge quantum dots embedded in MIS structure (AuPd/SiO 2 :Ge QDs/n-Si) grown by MBE