Abstract:The bias-dependent electrical characteristics of individual self-assembled GeSi quantum dots (QDs) are investigated by conductive atomic force microscopy. The results reveal that the conductive characteristics of QDs are strongly influenced by the applied bias. At low (-0.5 to - 2.0 V) and high (-2.5 to - 4.0 V) biases, the current distributions of individual GeSi QDs exhibit ring-like and disc-like characteristics respectively. The current of the QD's central part increases more quickly than that of the other parts as the bias magnitude increases. Histograms of the magnitude of the current on a number of QDs exhibit the same single-peak feature at low biases, and double- or three-peak features at high biases, where additional peaks appear at large-current locations. On the other hand, histograms of the magnitude of the current on the wetting layers exhibit the same single-peak feature for all biases. This indicates the conductive mechanism is significantly different for QDs and wetting layers. While the small-current peak of QDs can be attributed to the Fowler-Nordheim tunneling model at low biases and the Schottky emission model at high biases respectively, the large-current peak(s) may be attributed to the discrete energy levels of QDs. The results suggest the conductive mechanisms of GeSi QDs can be regulated by the applied bias.

Electrical Properties of Individual Self-Assembled Gesi Quantum Rings

Nanoscale Electrical Property Studies of Individual GeSi Quantum Rings by Conductive Scanning Probe Microscopy.

Composition and Conductance Distributions of Single GeSi Quantum Rings Studied by Conductive Atomic Force Microscopy Combined with Selective Chemical Etching

Conductive Atomic Force Microscopy Studies on the Transformation of Gesi Quantum Dots to Quantum Rings

CAFM Studies on Individual GeSi Quantum Dots and Quantum Rings

Self-Assembled Sige Quantum Rings Grown on Si(001) by Molecular Beam Epitaxy

Growth Mechanism Of Gesi Quantum Rings On Si(001)

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Growth and Shape Preservation of Self-Assembled SiGe Quantum Rings

Optical properties of Ge/Si quantum dot superlattices

Shape Preservation of Self-Assembled SiGe Quantum Rings During Si Capping

Increased Conductance of Individual Self-Assembled GeSi Quantum Dots by Inter-Dot Coupling Studied by Conductive Atomic Force Microscopy

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Bias-dependent Conductive Characteristics of Individual GeSi Quantum Dots Studied by Conductive Atomic Force Microscopy

Transient Hole Trapping in Individual Gesi Quantum Dot Grown on Si(001) Studied by Conductive Atomic Force Microscopy

Investigating the Composition and Conductance Distributions on Highly GeSi Mixed Quantum Dots and Inside Oxidation Problem

Giant optical anisotropy in cylindrical self-assembled InAs/GaAs quantum rings

Studying the Lateral Composition in Ge Quantum Dots on Si(001) by Conductive Atomic Force Microscopy

Effects of a Native Oxide Layer on the Conductive Atomic Force Microscopy Measurements of Self-Assembled Ge Quantum Dots

Local Structure of Ge Quantum Dots Self-Assembled on Si(100) Probed by X-Ray Absorption Fine-Structure Spectroscopy

Transport and electrical properties of Si and Ge quantum dots embedded in oxide layers of MOS structures for optoelectronic applications