Abstract:The charging/discharging behavior of Si quantum dots (QDs) embedded in amorphous silicon carbide (a-SiCx) was investigated based on the Al/insulating layer/Si QDs embedded in a-SiCx/SiO2/p-Si (metal-insulator-quantum dots-oxide-silicon) multilayer structure by capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. Transmission electron microscopy and Raman scattering spectroscopy measurements reveal the microstructure and distribution of Si QDs. The occurrence and shift of conductance peaks indicate the carrier transfer and the charging/discharging behavior of Si QDs. The multilayer structure shows a large memory window of 5.2 eV at +/- 8V sweeping voltage. Analysis of the C-V and G-V results allows a quantification of the Coulomb charging energy and the trapped charge density associated with the charging/discharging behavior. It is found that the memory window is related to the size effect, and Si QDs with large size or low Coulomb charging energy can trap two or more electrons by changing the charging voltage. Meanwhile, the estimated lower potential barrier height between Si QD and a-SiCx, and the lower Coulomb charging energy of Si QDs could enhance the charging and discharging effect of Si QDs and lead to an enlarged memory window. Further studies of the charging/discharging mechanism of Si QDs embedded in a-SiCx can promote the application of Si QDs in low-power consumption semiconductor memory devices. (C) 2015 AIP Publishing LLC.

Conductive Atomic Force Microscopy Studies on the Transformation of Gesi Quantum Dots to Quantum Rings

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Composition and Conductance Distributions of Single GeSi Quantum Rings Studied by Conductive Atomic Force Microscopy Combined with Selective Chemical Etching

CAFM Studies on Individual GeSi Quantum Dots and Quantum Rings

Nanoscale Electrical Property Studies of Individual GeSi Quantum Rings by Conductive Scanning Probe Microscopy.

Physical Mechanism of Quantum Dot to Quantum Ring Transformation Upon Capping Process

Electrical Properties of Individual Self-Assembled Gesi Quantum Rings

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Growth Mechanism Of Gesi Quantum Rings On Si(001)

Studying the Lateral Composition in Ge Quantum Dots on Si(001) by Conductive Atomic Force Microscopy

Self-Assembled Sige Quantum Rings Grown on Si(001) by Molecular Beam Epitaxy

Shape Preservation of Self-Assembled SiGe Quantum Rings During Si Capping

Growth and Shape Preservation of Self-Assembled SiGe Quantum Rings

Investigating the Composition and Conductance Distributions on Highly GeSi Mixed Quantum Dots and Inside Oxidation Problem

Electronic properties of single Ge/Si quantum dot grown by ion beam sputtering deposition.

The Stability of Faceted SiGe Quantum Dots Capped with a Thin Si Layer

Transient Hole Trapping in Individual Gesi Quantum Dot Grown on Si(001) Studied by Conductive Atomic Force Microscopy

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Effects of a Native Oxide Layer on the Conductive Atomic Force Microscopy Measurements of Self-Assembled Ge Quantum Dots

Charging/Discharging Behavior And Mechanism Of Silicon Quantum Dots Embedded In Amorphous Silicon Carbide Films