Abstract:The annealing of sub-critical Ge wetting layers (WL<3.5 ML) initiates the formation of 3D nanostructures, whose shape and orientation is determined by the WL thickness and thus directly related to the strain energy. The emergence of these nanostructures, hillocks and pre-quantum dots, is studied by scanning tunneling microscopy. A wetting layer deposited at 350 C is initially rough on the nanometer length-scale and undergoes a progressive transformation and smoothening until for T>460 C vacancy lines and the 2xn reconstruction are observed. The metastable Ge wetting layer (WL) then collapses to form 3D nanostructures whose morphology is controlled by the WL thickness: firstly, hillocks, with a wedding cake-type structure where the step edges run parallel to the <110> direction, are formed for thin wetting layers, while {105}-faceted structures, so-called pre-quantum dots (p-QDs), are formed from thicker layers. The wetting layer thickness and thus the misfit strain energy controls the type of structure. The crossover thickness between hillock and p-QDs regime is between 1.6 and 2.1 ML. The hillocks have larger lateral dimensions and volumes than p-QDs, and the p-QDs are exceptionally small quantum dots with a lower limit of 10 nm in width. Our work opens a new pathway to the control of nanostructure morphology and size in the elastically strained Ge/Si system. Keywords: Quantum dots, Stranski-Krastanov, epitaxy, strained layers, scanning tunneling microscopy

The Stability of Faceted SiGe Quantum Dots Capped with a Thin Si Layer

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots

Local Structure of Ge Quantum Dots Self-Assembled on Si(100) Probed by X-Ray Absorption Fine-Structure Spectroscopy

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Thermally Oxidized Formation Of New Ge Dots Over As-Grown Ge Dots In The Si Capping Layer

Small SiGe quantum dots obtained by excimer laser annealing

Nanofaceting of unit cells and temperature dependence of the surface reconstruction and morphology of Si(105) and (103)

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Electronic Properties and Morphologies of Ge Quantum Dots with Annealing Temperature

3D Nanostructures on Ge/Si(100) Wetting Layers: Hillocks and Pre-Quantum Dots

Conductive Atomic Force Microscopy Studies on the Transformation of Gesi Quantum Dots to Quantum Rings

Faceting and Nanoscale Faceting of Ge(hhl) Surfaces Around (113)

Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence

Atomic Structure of High-Index Ge Surfaces Consisting of Periodic Nanoscale Facets

Studying the Lateral Composition in Ge Quantum Dots on Si(001) by Conductive Atomic Force Microscopy

Inhomogeneous low temperature epitaxial breakdown during Si overgrowth of GeSi quantum dots

Mechanism for Coarsening of P-mediated Ge Quantum Dots During In-Situ Annealing

Shape Preservation of Self-Assembled SiGe Quantum Rings During Si Capping

First-Principles Study of Strain Stabilization of Ge(105) Facet on Si(001)