Abstract:Si quantum dots in SiO(2)/Si(3)N(4) hybrid matrix on quartz substrates were fabricated by magnetron sputtering of alternating silicon rich oxide and Si(3)N(4) layers followed by different post-deposition anneals. X-ray diffraction results indicate that the average dimension of the Si QDs ranges from 1.6 to 5.2 nm. The size and crystallisation of the Si nanocrystals are dependent on a number of factors, including the annealing condition, the SRO thickness and the Si(3)N(4) barrier thickness, as evidenced in XRD and Raman measurements. In particular, thicker Si(3)N(4) barrier layers seem to be able to suppress the growth of Si nanocrystals more effectively. PL measurements indicate that the apparent bandgap of the samples investigated in this work is in the range 1.12-1.67 eV, which demonstrates the effect of quantum confinement. More interestingly, analysis of the PL data reveals that the PL peak energy does not only depend on the size of the nanocrystals, but also affected by other details of the nanocrystal formation. A simple core-shell model is constructed to illustrate our explanation. These findings offer a preliminary understanding of the nanocrystal growth and radiative recombination processes in this newly synthesized material.

Shape Preservation of Self-Assembled SiGe Quantum Rings During Si Capping

Growth and Shape Preservation of Self-Assembled SiGe Quantum Rings

Self-Assembled Sige Quantum Rings Grown on Si(001) by Molecular Beam Epitaxy

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Growth Mechanism Of Gesi Quantum Rings On Si(001)

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Conductive Atomic Force Microscopy Studies on the Transformation of Gesi Quantum Dots to Quantum Rings

The Stability of Faceted SiGe Quantum Dots Capped with a Thin Si Layer

Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots

Electrical Properties of Individual Self-Assembled Gesi Quantum Rings

Influencing factors on the size uniformity of self-assembled SiGe quantum rings grown by molecular beam epitaxy.

Shape Change of Sige Islands with Initial Si Capping

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

SILICA CAPPING FOR AL0.3GA0.7AS/GAAS AND IN0.2GA0.8AS/GAAS QUANTUM WELL INTERMIXING

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Local Structure of Ge Quantum Dots Self-Assembled on Si(100) Probed by X-Ray Absorption Fine-Structure Spectroscopy

Nanoscale Electrical Property Studies of Individual GeSi Quantum Rings by Conductive Scanning Probe Microscopy.

Thermally Oxidized Formation Of New Ge Dots Over As-Grown Ge Dots In The Si Capping Layer

Composition and Conductance Distributions of Single GeSi Quantum Rings Studied by Conductive Atomic Force Microscopy Combined with Selective Chemical Etching

CAFM Studies on Individual GeSi Quantum Dots and Quantum Rings

Optical properties of Ge/Si quantum dot superlattices