Abstract:Si quantum dots in SiO(2)/Si(3)N(4) hybrid matrix on quartz substrates were fabricated by magnetron sputtering of alternating silicon rich oxide and Si(3)N(4) layers followed by different post-deposition anneals. X-ray diffraction results indicate that the average dimension of the Si QDs ranges from 1.6 to 5.2 nm. The size and crystallisation of the Si nanocrystals are dependent on a number of factors, including the annealing condition, the SRO thickness and the Si(3)N(4) barrier thickness, as evidenced in XRD and Raman measurements. In particular, thicker Si(3)N(4) barrier layers seem to be able to suppress the growth of Si nanocrystals more effectively. PL measurements indicate that the apparent bandgap of the samples investigated in this work is in the range 1.12-1.67 eV, which demonstrates the effect of quantum confinement. More interestingly, analysis of the PL data reveals that the PL peak energy does not only depend on the size of the nanocrystals, but also affected by other details of the nanocrystal formation. A simple core-shell model is constructed to illustrate our explanation. These findings offer a preliminary understanding of the nanocrystal growth and radiative recombination processes in this newly synthesized material.

Growth and Shape Preservation of Self-Assembled SiGe Quantum Rings

Shape Preservation of Self-Assembled SiGe Quantum Rings During Si Capping

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Self-Assembled Sige Quantum Rings Grown on Si(001) by Molecular Beam Epitaxy

Growth Mechanism Of Gesi Quantum Rings On Si(001)

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

The Growth of SiGe Quantum Rings in Au Thin Films on Epitaxial SiGe on Silicon

Physical Mechanism of Quantum Dot to Quantum Ring Transformation Upon Capping Process

Influencing factors on the size uniformity of self-assembled SiGe quantum rings grown by molecular beam epitaxy.

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Conductive Atomic Force Microscopy Studies on the Transformation of Gesi Quantum Dots to Quantum Rings

Thermodynamic Theory of Shape Evolution Induced by Si Capping in Ge Quantum Dot Self-Assembly

Theoretical Strategy For Self-Assembly Of Quantum Rings

Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots

Electrical Properties of Individual Self-Assembled Gesi Quantum Rings

Evolution of Various Nanostructures and Preservation of Self-Assembled InAs Quantum Dots During GaAs Capping

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Self‐Assembled Si Quantum‐Ring Structures on a Si Substrate by Plasma‐Enhanced Chemical Vapor Deposition Based on a Growth‐Etching Competition Mechanism

The Stability of Faceted SiGe Quantum Dots Capped with a Thin Si Layer

Growth Mechanisms of Quantum Ring Self-Assembly Upon Droplet Epitaxy

Local Structure of Ge Quantum Dots Self-Assembled on Si(100) Probed by X-Ray Absorption Fine-Structure Spectroscopy