Abstract:Owing to their remarkable electronic properties, silica ultrathin films have been utilized as an insulating layer in nanoelectronics systems. Silica films have been epitaxially grown on different substrates using various synthesis methods. Among all fabrication approaches, chemical vapor deposition has long been an advanced method for synthesizing two-dimensional (2D) materials due to its ability to ensure precise stacking control and minimize contamination between layers. This study harnessed the potential of CVD to atomically fabricate thin layered 2D silica on a SiO 2 /Si substrate. Significantly, a unique combination of multiple transition metals and salt as the catalysts aided the formation of 2D silica for the first time. Salt is a crucial catalyst in promoting the evaporation of high-melting-point metal catalysts, resulting in hexagonal nucleation sites on the SiO 2 /Si wafer. By meticulously controlling growth parameters, a distinctive hexagonal structure was obtained. Correspondingly, this work delves into the growth mechanism of 2D silica, as evidenced by experiments involving salt alone and individual transition metals. Group VB transition metals played a prominent role in achieving the hexagonal structure compared to their group IVB counterparts. This research offers insights into the formation and growth mechanisms of 2D silica, expanding the understanding of silica nanostructures.

Self‐Assembled Si Quantum‐Ring Structures on a Si Substrate by Plasma‐Enhanced Chemical Vapor Deposition Based on a Growth‐Etching Competition Mechanism

New Self-Limiting Assembly Model for Si Quantum Rings on Si(100).

Self-Assembled Sige Quantum Rings Grown on Si(001) by Molecular Beam Epitaxy

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Growth and Shape Preservation of Self-Assembled SiGe Quantum Rings

Chemical Vapor Growth of Silicon Phosphide Nanostructures

Strain-Less Directed Self-Assembly of Si Nanocrystals on Patterned Sio2 Substrate

Self-assembling mechanism of Si-QDs on thermally grown SiO2

Ordered GeSi nanorings grown on patterned Si (001) substrates

Formation Of Surface Structures During Heteroepitaxial Thin Film Growth On Prepatterned Substrates

Templated Growth of Quasi-One Dimensional Molecular Structures on Si(111)-(4×1)–In Surface

Controlled Formation of GeSi Nanostructures on Periodic Si (001) Sub-Micro Pillars.

Self-assembling formation of Si-QDs on SiO2 line patterns

Self-assembling Iron Silicide Nanobars and Structure on Silicon Wafer by Microwave Plasma Method

Self-Oscillated Growth Formation of Standing Ultrathin Nanosheets out of Uniform Ge/Si Superlattice Nanowires

Self-assembly of Si and SiO x nanostructures

Formation of Sic Nanostruture Using Hexamethyldisiloxane During Plasma-Assisted Hot-Filament Chemical Vapor Deposition

Controlled fabrication of freestanding monolayer SiC by electron irradiation

Towards Controllable Growth of Self-Assembled Sige Single and Double Quantum Dot Nanostructures

Laterally Aligned Quantum Rings: from One-Dimensional Chains to Two-Dimensional Arrays

Formation mechanism of two-dimensional hexagonal silica on SiO 2 /Si substrate